BST39 datasheet, PDF - EEWORLD Datasheet

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BST39: DescriptionNPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BST39 Overview

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BST39 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BST39

ISSUE 4 – JUNE 1996

FEATURES

* Fast Switching

* High h

COMPLEMENTARY TYPE –

PARTMAKING DETAIL –

AT1

SOT89

BST16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

CBO

CEO

EBO

tot

stg

SYMBOL

VALUE

400

350

500

-65 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CE(sat)

BE(sat)

obo

ibo

MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

For typical characteristics graphs see FMMT458 datasheet.

MIN.

400

350

0.5

1.3

MAX.

UNIT

CONDITIONS.

=10µA

=1mA*

=10µA

=300V

=50mA, I

=4mA

=50mA, I

=4mA

=20mA, V

=10V*

=10V, f=1MHz

=10mA, V

=10V,

f=5MHz

3 - 77

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