600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | DO-215AA |
| package instruction | R-PDSO-G2 |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum breakdown voltage | 78.6 V |
| Minimum breakdown voltage | 71.1 V |
| Breakdown voltage nominal value | 74.9 V |
| Maximum clamping voltage | 103 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 code | DO-215AA |
| JESD-30 code | R-PDSO-G2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 1.38 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 64 V |
| Maximum reverse current | 5 µA |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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