BSM35GB120DN2 datasheet, PDF - EEWORLD Datasheet

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BSM35GB120DN2: DescriptionIGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area); CategoryDiscrete semiconductor The transistor; File Size113KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSM35GB120DN2 Overview

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

BSM35GB120DN2 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-CUFM-X7
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)	75 ns
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-CUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	560 W
Certification status	Not Qualified
Maximum rise time (tr)	120 ns
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Nominal off time (toff)	400 ns
Maximum opening time (tons)	120 ns
Nominal on time (ton)	60 ns
VCEsat-Max	3.2 V
Base Number Matches	1

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BSM 35 GB 120 DN2

IGBT Power Module

Preliminary data

• Half-bridge

• Including fast free-wheeling diodes

• Doubled diode area

• Package with insulated metal base plate

Type

BSM 35 GB 120 DN2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Symbol

Values

1200

Unit

Package

HALF-BRIDGE 1

Ordering Code

C67070-A2111-A70

1200V 50A

CGR

= 20 kΩ

Gate-emitter voltage

DC collector current

± 20

= 25 °C

= 80 °C

Pulsed collector current,

= 1 ms

Cpuls

100

= 25 °C

= 80 °C

Power dissipation per IGBT

tot

280

+ 150

-55 ... + 150

≤

0.44

≤

0.8

2500

55 / 150 / 56

Vac

K/W

°C

= 25 °C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage,

= 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

stg

thJC

thJCD

Semiconductor Group

Mar-28-1996

BSM35GB120DN2 Related Products

	BSM35GB120DN2	C67070-A2111-A70
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

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