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71256S35J

Description
Standard SRAM, 32KX8, 35ns, CMOS, PQCC32, PLASTIC, LCC-32
Categorystorage    storage   
File Size621KB,10 Pages
ManufacturerIDT (Integrated Device Technology)
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71256S35J Overview

Standard SRAM, 32KX8, 35ns, CMOS, PQCC32, PLASTIC, LCC-32

71256S35J Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1164070330
package instructionQCCJ, LDCC32,.5X.6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-PQCC-J32
JESD-609 codee0
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Maximum standby current0.015 A
Minimum standby current4.5 V
Maximum slew rate0.155 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30

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