Standard SRAM, 16KX4, 25ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1167346218 |
| package instruction | 0.300 INCH, CERAMIC, DIP-24 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Maximum access time | 25 ns |
| I/O type | COMMON |
| JESD-30 code | R-CDIP-T24 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of terminals | 24 |
| word count | 16384 words |
| character code | 16000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.00015 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.105 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 6 |
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