TSFF6410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm):
∅
5
Peak wavelength:
λ
p
= 870 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
ϕ
= ± 22°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 24 MHz
Good spectral matching to Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
•
•
•
•
•
•
•
•
•
•
•
•
•
94
8389
DESCRIPTION
TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
in
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
PRODUCT SUMMARY
COMPONENT
TSFF6410
I
e
(mW/sr)
70
ϕ
(deg)
± 22
λ
P
(nm)
870
t
r
(ns)
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSFF6410
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
Document Number: 81126
Rev. 1.1, 29-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
1
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
TSFF6410
Vishay Semiconductors
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
200
180
120
100
80
R
thJA
= 230 K/W
60
40
20
0
0
10
20
30
40
50
60
70
80
90 100
21143
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
0
10
20 30 40
50 60 70
80
90 100
21142
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
45
125
70
700
50
- 0.35
± 22
870
40
0.25
15
15
24
2.1
135
MIN.
TYP.
1.5
2.3
- 1.8
10
MAX.
1.8
3.0
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81126
Rev. 1.1, 29-Jun-09
TSFF6410
High Speed Infrared Emitting Diode,
Vishay Semiconductors
870 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
0.02
Φ
e rel
- Relative Radiant Power
1000
t
P
/T = 0.01
T
amb
< 50 °C
1.25
1.0
I
F
- Forward Current (mA)
0.05
0.1
0.75
0.5
0.2
0.5
100
0.01
0.25
0
780
0.1
1
10
100
880
λ
-
Wavelength
(nm)
980
16031
t
P
- Pulse Duration (ms)
95 9886
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
1000
I
e rel
- Relative Radiant Intensity
I
F
- Forward Current (mA)
100
t
P
= 100
µs
t
P
/T = 0.001
10
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
1
0
18873
1
3
2
V
F
- Forward
Voltage
(V)
4
94
8883
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1000
I
e
- Radiant Intensity (mW/sr)
Φ
e
, I
e
- Attenuation (dB)
1
0
100
-1
-2
-3
-4
-5
10
1
I
FDC
= 70 mA
I
FAC
= 30 mA pp
10
1
0.1
1
18220
10
100
I
F
- Forward Current (mA)
1000
10
2
10
3
10
4
10
5
14256
f - Frequency (kHz)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Attenuation vs. Frequency
Document Number: 81126
Rev. 1.1, 29-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
ϕ
- Angular Displacement
TSFF6410
Vishay Semiconductors
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS
in millimeters
A
C
Ø 5.8 ± 0.15
7.7 ± 0.15
8.7
± 0.3
(3.5)
R 2.49 (sphere)
34.3 ± 0.55
< 0.7
Area not plane
+ 0.2
0.6 - 0.1
Ø 5 ± 0.15
1 min.
0.15
0.5 + 0.05
-
2.54 nom.
0.15
0.5 + 0.05
-
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5259.06-4
Issue: 6; 19.05.09
19257
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81126
Rev. 1.1, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
