K6R1008C1D-TC12T datasheet, PDF

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K6R1008C1D-TC12T: DescriptionStandard SRAM, 128KX8, 12ns, CMOS, PDSO32; Categorystorage storage; File Size184KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6R1008C1D-TC12T Overview

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32

K6R1008C1D-TC12T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	102859702
package instruction	TSOP, TSOP32,.46
Reach Compliance Code	unknown
ECCN code	3A991.B.2.B
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Minimum standby current	4.5 V
Maximum slew rate	0.055 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL

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PRELIMINARY

Preliminary

PRELIMINARY

K6R1008C1D-C/1D-I/D-P

Document Title

128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).

Operated at Commercial and Industrial Temperature Ranges.

CMOS SRAM

Revision History

Rev. No.

Rev. 0.0

Rev. 0.1

History

Initial release with Preliminary.

Current modift

Draft Data

June. 8. 2001

September. 9. 2001

Remark

Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Revision 0.1

September 2001

K6R1008C1D-TC12T Related Products

	K6R1008C1D-TC12T	K6R1008C1D-JI12T	K6R1008C1D-JI10T	K6R1008C1D-TI10T	K6R1008C1D-JC10T	K6R1008C1D-TI15	K6R1008C1D-TI15T
Description	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32,	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	not_compliant	unknown	unknown	unknown	unknown
Maximum access time	12 ns	12 ns	10 ns	10 ns	10 ns	15 ns	15 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-J32	R-PDSO-J32	R-PDSO-G32	R-PDSO-J32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Number of terminals	32	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	85 °C	85 °C	70 °C	85 °C	85 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	SOJ	SOJ	TSOP	SOJ	TSOP	TSOP
Encapsulate equivalent code	TSOP32,.46	SOJ32,.44	SOJ32,.44	TSOP32,.46	SOJ32,.44	TSOP32,.46	TSOP32,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.055 mA	0.055 mA	0.065 mA	0.065 mA	0.065 mA	0.045 mA	0.045 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	J BEND	J BEND	GULL WING	J BEND	GULL WING	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
package instruction	TSOP, TSOP32,.46	SOJ, SOJ32,.44	-	TSOP, TSOP32,.46	SOJ, SOJ32,.44	TSOP, TSOP32,.46	TSOP, TSOP32,.46

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