TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 200 µA
This series is currently available, but
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
K
A
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
TIC106M
TIC106N
Repetitive peak reverse voltage
Continuous on-state curr ent at (or below) 80°C case temperature (see Note 2)
(see Note 3)
TIC106S
TIC106D
S YMBOL
V
DRM
VALUE
400
600
700
800
400
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
P
GM
T
C
T
L
I
GM
600
700
800
5
3.2
0.2
1.3
-40 to +110
-40 to +125
230
0.3
30
V
A
A
A
A
V
UNIT
TIC106M
TIC106N
TIC106S
TIC106D
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
Surge on-state current at (or below) 25°C (see Note 4)
Peak gate power dissipation (pulse width
≤
300
µ
s)
Average gate power dissipation (see Note 5)
Storage temperature range
Operating case temperature range
Peak positive gate current (pulse width
≤
300
µ
s)
P
G(AV)
T
stg
W
°C
°C
°C
W
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 12 V
V
AA
= 12 V
t
p(g)
≥
20 µs
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
I
H
Holding current
Initiating I
T
= 10 mA
V
AA
= 12 V
Initiating I
T
= 10 mA
V
T
dv/dt
NOTE
Peak on-state
voltage
Critical rate of rise of
off-state voltage
I
T
= 5 A
V
D
= rated V
D
(See Note 6)
R
GK
= 1 kΩ
T
C
= 110°C
10
R
GK
= 1 kΩ
TEST CONDITIONS
R
GK
= 1 kΩ
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
C
= - 40°C
T
C
= 110°C
0.4
0.2
8
mA
5
1.7
V
V/µs
0.6
T
C
= 110°C
T
C
= 110°C
t
p(g)
≥
20
µs
T
C
= - 40°C
5
MIN
TYP
MAX
400
1
200
1.2
1
V
UNIT
µA
mA
µA
6: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3.5
62.5
UNIT
°C/W
°C/W
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT
DERATING CURVE
I
T(AV)
- Maximum Average Anode Forward Current - A
6
Continuous DC
5
P
A
- Anode Power Dissipated - W
TI20AA
ANODE POWER DISSIPATED
vs
ON-STATE CURRENT
100
T
J
= 110°C
TI20AB
4
Φ
= 180º
3
10
2
0°
1
180°
Φ
Conduction
Angle
0
30
1
40
50
60
70
80
90
100
110
1
10
I
T
- On-State Current - A
100
T
C
- Case Temperature - °C
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
T
C
≤
80 °C
I
TM
- Peak Half-Sine-Wave Current - A
No Prior Device Conduction
Gate Control Guaranteed
TI20AC
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
10
R
θJC(t)
- Transient Thermal Resistance - °C/W
TI20AD
10
1
1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
0·1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
Figure 3.
Figure 4.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
1
V
AA
= 12 V
V
GT
- Gate Trigger Voltage - V
0·8
R
L
= 100
Ω
t
p(g)
≥
20 µs
0·6
I
H
- Holding Current - mA
R
GK
= 1 kΩ
TC20AB
HOLDING CURRENT
vs
CASE TEMPERATURE
10
V
AA
= 12 V
R
GK
= 1 kΩ
Initiating I
T
= 10 mA
TC20AD
1
0·4
0·2
0
-50
-25
0
25
50
75
100
125
0.1
-50
-25
0
25
50
75
100
125
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 5.
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
2.5
TC20AE
V
TM
- Peak On-State Voltage - V
2.0
T
C
= 25 °C
t
p
= 300 µs
Duty Cycle
≤
2 %
1.5
1.0
0.5
0.0
0·1
1
10
I
TM
- Peak On-State Current - A
Figure 7.
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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