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6116LA150L24B

Description
Standard SRAM, 2KX8, 150ns, CMOS, CQCC24
Categorystorage    storage   
File Size801KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

6116LA150L24B Overview

Standard SRAM, 2KX8, 150ns, CMOS, CQCC24

6116LA150L24B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1156988378
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time150 ns
I/O typeCOMMON
JESD-30 codeR-XQCC-N24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeQCCN
Encapsulate equivalent codeLCC24,.3X.4
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0002 A
Minimum standby current2 V
Maximum slew rate0.085 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30

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