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GCHS30A08

Description
30 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size264KB,2 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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GCHS30A08 Overview

30 A, 80 V, SILICON, RECTIFIER DIODE

GCHS30A08 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
package instructionR-PSFM-T3
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
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