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1N4935G

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size185KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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1N4935G Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
FAST RECOVERY RECTIFIERS
1N4933G - 1N4937G
DO-41 (Plastic)
Axial Lead Plastic
Package
High Surge Current Capability and Fast Switching for High Efficiency
Maximum Rating and Electrical Characteristics
o
Ratings at T
a
= 25 C ambient temperature unless specified otherwise. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%
DESCRIPTION
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified 0.375"
(9.5mm) Lead Length at T
a
=55ºC
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at 1A DC
Maximum Reverse Current T
a
=25
o
C
at Rated DC Blocking Voltage
T
a
=100
o
C
Typical Junction Capacitance
Typical Thermal Resistance Junction to
Ambient
Maximum Reverse Recovery Time
Operating and Storage Junction
Temperature Range
SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
V
RRM
50
100
200
400
600
V
RMS
35
70
140
280
420
V
DC
I
(AV)
I
FSM
V
F
I
R
*C
J
**R
th (j-a)
***T
RR
T
j
, T
stg
50
100
200
1.0
30
1.2
5.0
500
12
50
200
- 55 to +150
400
600
UNIT
V
V
V
A
A
V
µA
µA
pF
ºC/W
ns
ºC
* Measured at 1MHz and Applied Reverse Voltage of 4.0V
** Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length PCB Mounted
*** Reverse Recovery Test Conditions : I
F
=1A, V
R
=30V
1N4933G_4937G Rev280505E
Continental Device India Limited
Data Sheet
Page 1 of 5

1N4935G Related Products

1N4935G 1N4933G 1N4936G 1N4937G
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

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