T120F10VEB datasheet, PDF - EEWORLD Datasheet

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T120F10VEB: DescriptionSilicon Controlled Rectifier, 120000mA I(T), 1000V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size697KB，7 Pages; ManufacturerEUPEC [eupec GmbH]

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T120F10VEB Overview

Silicon Controlled Rectifier, 120000mA I(T), 1000V V(DRM),

T120F10VEB Parametric

Parameter Name	Attribute value
Objectid	101733646
Reach Compliance Code	unknown
ECCN code	EAR99
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	250 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	2900 A
Maximum on-state voltage	2.2 V
Maximum on-state current	120000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	SCR

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T120F10VEB Related Products

	T120F10VEB	T120F10VSC	T120F11VFC	T120F11VSM	T120F13VEL	T120F11VEL	T120F12VSC	T120F13VSL	T120F10VFL
Description	Silicon Controlled Rectifier, 120000mA I(T), 1000V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1000V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1100V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1100V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1300V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1100V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1200V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1300V V(DRM),	Silicon Controlled Rectifier, 120000mA I(T), 1000V V(DRM),
Objectid	101733646	101733655	101733724	101733730	101733867	101733721	101733801	101733875	101733652
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Critical rise rate of minimum off-state voltage	50 V/us	500 V/us	500 V/us	1000 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum holding current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
Maximum leakage current	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA
On-state non-repetitive peak current	2900 A	2900 A	2900 A	2900 A	2900 A	2900 A	2900 A	2900 A	2900 A
Maximum on-state voltage	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V
Maximum on-state current	120000 A	120000 A	120000 A	120000 A	120000 A	120000 A	120000 A	120000 A	120000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	1000 V	1000 V	1100 V	1100 V	1300 V	1100 V	1200 V	1300 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR

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