Product Specification
www.jmnic.com
Silicon Power Transistors
BUL52B
DESCRIPTION
・With
TO-220C package
・High
voltage
・Fast
switching
・High
energy rating
APPLICATIONS
・Designed
for use in
electronic ballast applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
emitter
DESCRIPTION
・
LIMITING VALUES
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W
℃
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
CEsat-4
V
BEsat-1
V
BEsat-2
V
BEsat-3
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
ob
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Emitter-base saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=0.1A I
B
=20mA
I
C
=1A I
B
=0.2A
I
C
=2A I
B
=0.4A
I
C
=3A I
B
=0.6A
I
C
=1A I
B
=0.2A
I
C
=2A I
B
=0.4A
I
C
=3A I
B
=0.6A
V
CB
=800V I
E
=0
T
C
=125℃
V
CE
=400V I
B
=0
V
EB
=9V I
C
=0
T
C
=125℃
I
C
=0.1A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=1V
T
C
=125℃
I
C
=0.2A ; V
CE
=4V
V
CB
=20V ;f=1MHz
20
15
10
5
20
40
MIN
400
800
10
TYP.
BUL52B
MAX
UNIT
V
V
V
0.1
0.2
0.3
0.5
1.0
1.1
1.2
10
100
100
10
100
V
V
V
V
V
V
V
μA
μA
μA
45
MHz
pF
JMnic
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