SMD Type
PNP Transistors
2SA1954
Transistors
■
Features
●
Low saturation voltage: V
CE (sat) (1)
= −15 mV (typ.)
@I
C
= −10 mA/I
B
= −0.5 mA
●
Large collector current: I
C
= −500 mA (max)
1 Base
2 Emitter
3 Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-15
-12
-5
-500
-50
100
125
-55 to 125
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector-emitter on resistance
Turn-ON Time
Storage Time
Turn-OFF Time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，I
B
= 0
I
E
= -100μA， I
C
=0
V
CB
= -15V , I
E
=0
V
EB
= -5V , I
C
=0
-15
-110
-0.87
300
0.9
40
See specified Test Circuit.
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -2V, I
C
= -10mA
80
280
45
4.2
130
pF
MHz
ns
Min
-15
-12
-5
-0.1
-0.1
-30
-250
-1.2
1000
Ω
uA
mV
V
V
Typ
Max
Unit
V
CE(sat)1
I
C
=-10mA, I
B
=-0.5mA
V
CE(sat)2
I
C
=-200mA, I
B
=-10mA
V
BE(sat)
h
FE
R
on
t
on
t
stg
t
off
C
ob
f
T
I
C
=-200mA, I
B
=-10mA
V
CE
= -2V, I
C
= -10mA
I
B
=-1mA,V
in
=-1V
rms
,f=1KHz
■
Classification of h
fe
Type
Range
Marking
2SA1954-A
300-600
GA
2SA1954-B
500-1000
GB
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