SMD Type
PNP Transistors
2SB1667
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
■
Features
●
Low saturation voltage
+0.2
9.70
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
Audio Frequency Power Amplifier Applications
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25°C
Ta = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-60
-60
-7
-3
-0.5
25
1.5
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
t
on
t
stg
t
f
C
ob
f
T
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -5V, I
C
= -500mA
See specified Test Circuit
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -5 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -60 V , I
E
=0
V
EB
= -7V , I
C
=0
I
C
=-3 A, I
B
=-300mA
I
C
=-3 A, I
B
=-300mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -500mA
V
CE
=- 5V, I
C
= -3 A
60
20
0.4
1.7
0.5
150
9
pF
MHz
us
-0.7
-0.5
Min
-60
-60
-7
-100
-100
-1.7
-1.2
-1
300
V
nA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
2SB1667-O
60-120
2SB1667-Y
100-200
2SB1667-GR
150-300
3
.8
0
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1
SMD Type
PNP Transistors
2SB1667
Switching Time Test Circuit
20
μs
Input
I
B2
I
B1
I
B2
Output
15 Ω
Transistors
I
B1
V
CC
=
−30
V
I
B1
= 0.2 A,I
B2
= 0.2 A,
duty cycle
≤
1%
■
Typical Characterisitics
−4
I
C
– V
CE
Common emitter
−3.0
I
C
– V
BE
Common emitter
(A)
−3
(A)
−80
−70
−60
Tc = 25°C
−50
−40
−30
−20
IB =
−10
mA
Tc
=
100°C
VCE =
−5
V
−2.0
Collector current I
C
−2
Collector current I
C
25
−1.0
−25
−1
0
0
0
−1
−2
−3
−4
−5
0
0
−0.4
−0.8
−1.2
−1.6
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector-emitter saturation voltage
V
CE (sat)
(V)
1000
500
h
FE
– I
C
Common emitter
VCE =
−5V
Tc = 100°C
25
−25
−1
−0.5
−0.3
V
CE (sat)
– I
C
Common emitter
IC/IB = 10
DC current gain h
FE
300
Tc = 100°C
−0.1
−0.05
25
100
50
−25
20
−0.02
−0.02
−0.02
−0.1
−0.3
−1
−3
−5
−0.1
−0.3
−1
−3
Collector current I
C
(A)
Collector current I
C
(A)
2
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SMD Type
PNP Transistors
2SB1667
■
Typical Characterisitics
100
Transistors
r
th
– t
w
Curves should be applied in thermal
limited area.
(Single nonrepetitive pulse)
No heat sink
Transient thermal resistance
r
th
(°C/W)
10
Infinite heat sink
1
0
0.001
0.01
0.1
1
10
100
1000
Pulse width t
w
(s)
30
P
C
– Ta
Infinite heat sink
Safe operation area
10
IC max (pulse)*
1 ms*
IC max (continous)
Collector power dissipation P
C
(W)
25
20
Collector current I
C
(A)
10 ms*
15
1
DC operation
Tc
=
25°C
100 ms*
1 s*
*:
Single nonrepetitive pulse Tc
=
25°C
Curves must be derated linearly with
10
5
No heat sink
0
0
50
100
150
200
0.1
1
increase in temperature.
10
100
Ambient temperature
Ta
(°C)
Collector-emitter voltage
V
CE
(V)
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