DIP Type
NPN Transistors
KTC2238A
TO-220
1.30
±
0.10
(1.70)
9.90
±
0.20
Transistors
4.50
±
0.20
2.80
±
0.10
(8.70)
ø3.60
±
0.10
1.30
–0.05
+0.10
(1.46)
●
High Transition Frequency
●
Complementary to KTA968A
9.20
±
0.20
13.08
±
0.20
(1.00)
(3.00)
15.90
±
0.20
1.27
±
0.10
1.52
±
0.10
1 2 3
0.80
±
0.10
2.54TYP
[2.54
±
0.20
]
2.54TYP
[2.54
±
0.20
]
10.08
±
0.30
18.95MAX.
(3.70)
■
Features
(45
)
0.50
–0.05
+0.10
2.40
±
0.20
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc= 25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
180
180
5
1.5
25
150
-55 to 150
10.00
±
0.20
1. Base
2. Collector
3. Emitter
Unit
V
A
W
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= 1 mA， I
E
= 0
Ic= 10 mA，I
B
=0
I
E
= 1 mA， I
C
= 0
V
CB
= 180 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=500mA, I
B
=500mA
I
C
=500mA, I
B
=500mA
V
CE
= 5V, I
C
=500mA
V
CE
= 5V, I
C
=100mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 100mA
70
25
100
Min
180
180
5
1
1
1.5
1.2
1
240
pF
MHz
V
uA
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
KTC2238A-O
70-240
KTC2238A-Y
120-240
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1
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