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MV1660CCHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 220pF C(T), 20V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

MV1660CCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 220pF C(T), 20V, Silicon, Abrupt

MV1660CCHIP Parametric

Parameter NameAttribute value
Objectid1404845763
package instructionX-XUUC-N
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage20 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Nominal diode capacitance220 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor150
Maximum repetitive peak reverse voltage20 V
Maximum reverse current1e-7 µA
Reverse test voltage15 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
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