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MB1S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size681KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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MB1S Overview

BRIDGE RECTIFIER DIODE

MB1S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
SMD Type
Bridge Rectifiers
MB1S ~ MB8S
SOIC-4
Features
Low leakage
Surge overload rating:
35 amperes peak.
Ideal for printed circuit board.
0.031(0.8)
0.0191(0.5)
0.106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
1
––
+
4
3
Diodes
Unit:mm
0.106(2.7)
0.09(2.3)
0.118(3.0)
MAX
~
~
2
0.008(0.2)
0.275(7)MAX
0.067(1.7)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.014(0.35)
0.006(0.15)
0.043(1.1)
0.027(0.7)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.057(1.3)
C0.02(0.5)
Dimensions are in:
inches (mm)
1 AC in
2 AC in
3+
4-
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage @ I
F
=0.5A
Average Rectified Current @ Ta = 50°C
Peak Forward Surge Current @ 8.3ms
Maximum DC Reverse Current Ta=25℃
Ta=125℃
I
2
t rating for fusing t < 8.3 ms
Total Device Dissipation
Derate above 25°C
Typical Junction Capacitance (Note.1)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature
Note.1: V
R
= 4V, f = 1 MHz
Symbol
V
RRM
V
RMS
V
DC
V
F
I
O
I
FSM
I
R
I
2
t
P
D
Cj
R
thJA
R
thJC
Tj
Tstg
MB1S
100
70
100
MB2S
200
140
200
MB4S
400
280
400
1
0.5
35
5
0.5
5
1.4
11
13
85
20
150
-55 to 150
A
uA
mA
A
2
t
W
mW/℃
pF
℃/W
MB6S
600
420
600
MB8S
800
560
800
V
Unit
www.kexin.com.cn
1

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