DATA SHEET
SEMICONDUCTOR
MBRX120SL Thru MBRX160SL
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
0.016(0.4) Typ.
H
SOD-323
0.099 (2.51) Typ
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.0485 (1.23) Typ
0.047 (1.2)
0.031 (0.8)
0.04 (1.01) Typ
0.016(0.4) Typ.
Low leakage current.
Dimensions in inches and (millimeters)
D
D
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight :
Sensitivity:
Moisture
0.04 gram
Level 1 per J-STD-020C
W
L
Unit : mm
SOD-323
D
0.7
W
1.5
L
2.7
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JC
C
J
T
STG
-55
90
120
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
12
13
14
15
16
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
MBRX120SL
MBRX130SL
MBRX140SL
MBRX150SL
MBRX160SL
(V)
14
21
28
35
42
(V)
20
30
40
50
60
(V)
20
30
40
50
60
0.55
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.70
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
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REV.02 20120305
DEVICE CHARACTERISTICS
MBRX120SL Thru MBRX160SL
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
10
20
V
~
40
V
3.0
1.0
50
V
~
AMBIENT TEMPERATURE,( C)
Pulse Width 300us
1% Duty Cycle
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
0.1
PEAK FORWARD SURGE CURRENT,(A)
24
.01
.1
.3
.5
.7
.9
60
V
Tj=25 C
1.1
1.3
1.5
18
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
12
6
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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REV.02 20120305
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