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RJK0406JPE_15

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size82KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK0406JPE_15 Overview

Silicon N Channel MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK0406JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 1.65 m typ.
High current devices : I
D
= 160 A
Low input capacitance : Ciss = 6300 pF typ
R07DS0335EJ0200
Rev.2.00
Dec 19, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
G
1
2
3
1.
2.
3.
4.
S
Gate
Drain
Source
Drain
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Tch = 25C, Rg
50
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
Note
3
I
D
(pulse)
Note
1
I
DR
Note
3
I
DR
(pulse)
Note
1
I
AP
Note
2
E
AR
Note
2
Pch
Note
3
Tch
Note
4
Tstg
Value
40
+20 / –5
160
640
160
640
70
653
192
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal Impedance Characteristics
Channel to case thermal impedance
ch-c:
0.781C/W
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
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