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RQ3E130BN

Description
Nch 30V 13A Middle Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size3MB,12 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RQ3E130BN Overview

Nch 30V 13A Middle Power MOSFET

RQ3E130BN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instruction,
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
RQ3E130BN
  
Nch 30V 13A Middle Power MOSFET
l
Outline
  
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
6.0mΩ
±13A
2W
HSMT8
           
 
 
 
           
 
 
           
l
Inner circuit
l
Features
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
l
Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
l
Absolute maximum ratings
(T
a
= 25°C)
l
Application
Type
Switching
Embossed
Tape
330
12
3000
TB
E130BN
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D
I
D,pulse*1
V
GSS
P
D*2
T
j
T
stg
Value
30
±13
±52
±20
2
150
-55 to +150
Unit
V
A
A
V
W
                                              
                                                                                         
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
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