The RF5322 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5322 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5322 also has built-in power detector
and incorporates the input, interstage, and output matching components internally
which reduces the component count used externally and makes it easier to incorpo-
rate on any design.
Ordering Information
RF5322
RF5322SR
RF5322TR7
RF5322PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4 to 2.5 GHz
and 5 piece loose samples
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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stm32/stm8
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