IRFP450A datasheet, PDF - EEWORLD Datasheet

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IRFP450A: DescriptionMOSFET N-Chan 500V 14 Amp; CategoryDiscrete semiconductor The transistor; File Size312KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRFP450A Overview

MOSFET N-Chan 500V 14 Amp

IRFP450A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	760 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AC
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	205 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFP450A, SiHFP450A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 10 V

Single

FEATURES

500

0.40

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

Avalanche Voltage and Current

• Effective C

oss

Specified

• Lead (Pb)-free Available

and

Available

RoHS*

COMPLIANT

TO-247

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

N-Channel

MOSFET

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge, Full Bridge

• PFC Boost

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-247

IRFP450APbF

SiHFP450A-E3

IRFP450A

SiHFP450A

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

500

± 30

8.7

1.5

760

190

4.1

- 55 to + 150

300

1.1

UNIT

W/°C

V/ns

°C

lbf · in

N·m

= 25 °C

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 7.8 mH, R

= 25

Ω,

= 14 A (see fig. 12).

c. I

≤

14 A, dI/dt

≤

130 A/µs, V

≤

, T

≤

150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91230

S-81271-Rev. A, 16-Jun-08

www.vishay.com

IRFP450A Related Products

	IRFP450A	IRFP450APBF
Description	MOSFET N-Chan 500V 14 Amp	Timers u0026 Support Products Precision
Is it Rohs certified?	incompatible	conform to
Maker	Vishay	Vishay
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	compliant
Avalanche Energy Efficiency Rating (Eas)	760 mJ	760 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	14 A	14 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AC	TO-247
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	56 A	56 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN LEAD	MATTE TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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