A Product Line of
Diodes Incorporated
ZXTN617MA
15V NPN LOW SATURATION TRANSISTOR
Features and Benefits
•
•
•
•
•
•
•
•
•
•
•
BV
CEO
> 15V
I
C
= 4.5A Continuous Collector Current
Low Saturation Voltage (100mV max @ 1A)
R
SAT
= 45 mΩ for a low equivalent On-Resistance
h
FE
specified up to 12A for high current gain hold up
Low profile 0.6mm high package for thin applications
R
θ
JA
efficient, 60% lower than SOT23
2
4mm footprint, 50% smaller than SOT23
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
Case: DFN2020B-3
Case Material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal Package Height: 0.6mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
Applications
•
•
•
•
•
MOSFET Gate Driving
DC–DC Converters
Charging Circuits
Motor Control
Power switch
DFN2020B-3
C
B
E
Top View
Bottom View
Device Symbol
Bottom View
Pin-Out
Ordering Information
Product
ZXTN617MATA
Notes:
Marking
SA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com.
Marking Information
SA
SA = Product Type Marking code
Top View
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
1 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Note 3)
(Note 4)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Value
40
15
7
15
4.5
5
1
Unit
V
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 3)
P
D
(Note 4)
(Note 3)
(Note 4)
(Note 5)
R
θ
JA
R
θ
JL
T
J,
T
STG
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
3. For a device surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t
≤
5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
2 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Thermal Characteristics
2.0
I
C
Collector Current (A)
10
V
CE(SAT)
Limited
Max Power Dissipation (W)
1.5
1
DC
1s
100ms
10ms
1ms
100us
10 sqcm
Single
1oz Cu
T
amb
=25°C
1.0
0.1
0.5
0.01
0.1
Single Pulse, T
amb
=25°C
1
10
0.0
0
25
50
75
100
125
150
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
225
10 sqcm
Single
1oz Cu
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
200
175
150
125
100
75
50
25
0
0.1
1
2oz copper
1oz copper
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T
amb
=25°C
T
j max
=150°C
Continuous
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2oz copper
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
3 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
40
15
7
-
-
-
200
300
200
150
-
-
-
-
-
-
-
-
-
80
-
-
Typ
70
18
8.2
-
-
-
415
450
320
240
80
8
70
165
240
200
0.88
0.94
30
120
120
160
Max
-
-
-
100
100
100
-
-
-
-
-
14
100
200
310
-
0.96
1.05
40
-
-
-
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100 µA
I
C
= 10 mA
I
E
= 100 µA
V
CB
= 30V
V
EB
= 6V
V
CES
= 12V
I
C
= 10mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 12A, V
CE
= 2V
I
C
=0.1A, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I
C
= 3A, I
B
= 50mA
I
C
=4.5A, I
B
= 50mA
I
C
=4.5A, I
B
= 100mA
I
C
= 4.5A, V
CE
= 2V
I
C
= 4.5A, I
B
= 50mA
V
CB
= 10V. f = 1MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 10mA
Static Forward Current Transfer Ratio (Note 6)
h
FE
-
Collector-Emitter Saturation Voltage (Note 6)
V
CE(sat)
mV
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Notes:
V
BE(on)
V
BE(sat)
C
obo
f
T
t
on
t
off
V
V
pF
MHz
ns
ns
6. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%.
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Typical Electrical Characteristics
1
Tamb=25°C
0.25
I
C
/I
B
=50
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
I
C
/I
B
=100
0.15
0.10
0.05
0.00
1m
100°C
25°C
-55°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
1m
1m
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
630
1.2
V
CE
=2V
100°C
V
CE(SAT)
v I
C
540
450
1.0
I
C
/I
B
=50
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
Typical Gain (h
FE
)
Normalised Gain
360
270
180
90
0
V
BE(SAT)
(V)
0.8
-55°C
0.6
25°C
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
0.8
V
CE
=2V
V
BE(ON)
(V)
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN617MA
Document number: DS31888 Rev. 5 - 2
5 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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