SEMICONDUCTOR
HFA15PB120
FRED
Ultrafast Soft Recovery Diode
15A / 1200V
RoHS
RoHS
Nell High Power Products
FEATURES
Ultrafast and ultrasoft recovery
Very low I
RRM
and Q
rr
Compliant to RoHS
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
TO-247 AC modified
common
cathode
2
DESCRIPTION
HFA15PB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V and
15A continuous current,the HFA15PB120 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
of peak recovery current (I
RRM
) and does not exhibit
any tendency to “snap-off” during the tb portion of
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15PB120 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
l
F(AV)
V
R
TO-247AC modified (2 pins)
15A
1200
V
2.3
V
33
ns
V
F
at l
F,
at 25°C
t
rr
(typ.)
T
J
max.
Diode variation
150ºC
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
600
Tc
= 100
ºC
15
180
60
Tc
= 25
ºC
Tc
= 100
ºC
151
60
- 55
to
+ 150
ºC
W
A
UNITS
V
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
V
R
I
F
l
FSM
l
FRM
P
D
T
J
, T
Stg
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Page 1 of 5
SEMICONDUCTOR
HFA15PB120
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 15
A
1200
-
-
-
-
-
-
-
-
1.8
2.7
1.8
1.00
375
27
8
-
2.3
3.2
2.3
20
2000
40
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 30
A
I
F
= 15
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
Measured lead to lead
5
mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = 200 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 15A
dI
F
/dt = 200 A/µs
V
R
= 800 V
-
-
-
-
-
-
-
-
-
-
38
33
240
290
3
6
260
960
120
76
45
-
ns
60
120
6.0
10
180
600
-
-
A/µs
nC
A
Q
rr1
Q
rr2
dl
(rec)M
/dt1
dl
(rec)M
/dt2
THERMAL
-
MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC Modified
SYMBOL
T
lead
TEST CONDITIONS
0.063''
from case
(1.6
mm) for
10
s
MIN.
TYP.
MAX.
300
UNITS
°C
-
-
-
-
-
1.18
41
K/W
41
-
-
-
12
(10)
g
oz.
kgf
.
cm
(lbf .
in)
R
thJC
-
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
-
0.25
6.0
0.21
-
HFA15PB120
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Page 2 of 5
SEMICONDUCTOR
HFA15PB120
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.20
thermal impedance- Z
θJC
(°C/W)
D
= 0.9
1.00
0.7
0.80
0.60
0.40
0.20
0
10
-5
0.5
Note:
P
DM
0.3
t
1
t
2
0.1
0.05
10
-4
SINGLE PULSE
Duty Factor D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
10
-3
10
-2
10
-1
1
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
60
Fig3. Reverse recovery time vs. current rate
of change
400
T J = 125°C
V R = 800V
Reverse recovery time-t
rr
(ns)
50
350
300
250
200
150
100
50
0
0
30A
Forward current-l
F
(A)
T J = 175°C
40
30
20
10
0
0
T J = 125°C
T J = 25°C
T J = -55°C
15A
7.5A
1
2
3
4
5
200
400
600
800
1000
1200
Anode-to-cathode voltage-V
F
(V)
Current rate of change-di
F
/dt(A/µs)
Fig.4 Reverse recovery charge vs. current
rate of change
2500
Fig.5 Reverse recovery current vs. current
rate of change
25
Reverse recovery current-l
RRM
(A)
Reverse recovery charge-Q
rr
(nC)
T J = 125°C
V R = 800V
T J = 125°C
V R = 800V
30A
2000
30A
20
1500
15A
15
1000
7.5A
500
10
7.5A
15A
5
0
0
200
400
600
800
1000
1200
0
0
200
400
600
800
1000
1200
Current rate of change-di
F
/dt(A/µs)
Current rate of change-di
F
/dt(A/µs)
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Page 3 of 5
SEMICONDUCTOR
HFA15PB120
RoHS
RoHS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.2
trr
1.0
0.8
0.6
0.4
0.2
0.0
0
Qrr
trr
I
RRM
20
Qrr
Fig.7 Maximum average forward current vs. case temperature
30
Duty cycle = 0.5
T
J
=150°C
25
(Normalized to 1000A/µs)
Dynamic parameters, K f
l F(AV) (A)
15
10
5
0
25
25
50
75
100
125
150
50
75
100
125
150
175
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
80
Fig.9 Reverse recovery parameter test circuit
Junction capacitance, C
J
(pF)
70
60
V
R
= 200
V
0.01
Ω
50
40
30
20
10
0
1
10
reverse voltage (V), V
R
100
200
dIF
/dt
adjust
L
= 70
µH
D.U.T.
D
G
IRFP250
S
Fig.10 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dI
F
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
t
rr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rrx
l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during t
b
portion of t
rr
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Page 4 of 5
SEMICONDUCTOR
HFA15PB120
RoHS
RoHS
Nell High Power Products
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
16.15 (0.242)
N-HFA15PB120
2 plins
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
20.80 (0.819)
21.46 (0.845)
CATHODE
TO BASE
3.55 (0.138)
3.81 (0.150)
2
1
4.50 (0.177)Max
0.40 (0.016)
0.79 (0.031)
2
3
1.65 (0.065)
19.81 (0.780)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)
2.13 (0.084)
(TYP.)
1
Cathode
3
Anode
2.21 (0.087)
2.59 (0.102)
10.90 (0.43)
Conforms to JEDEC Outline TO-247AC (Modified)
Dimensions in millimeters and (inches)
ORDERING INFORMATION TABLE
Device code
HFA
1
15
2
PB 120
3
4
1
2
3
4
-
-
-
-
FRED family
Current rating
(15 =15A)
PB
=
TO-247AC modified
Voltage rating:
(120 = 1200
V)
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Page 5 of 5
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