UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
Power MOSFET
10A, 150V, 0.3Ω, N-CHANNEL
POWER MOSFETS
DESCRIPTION
The UTC
10N15
is an N-channel enhancement mode silicon-gate
power field effect transistors, it uses UTC’s advanced technology to
provide the customers with high breakdown voltage etc.
The UTC
10N15
is suitable for switching converters, switching
regulators, relay drivers and motor drivers, etc.
FEATURES
* R
DS(ON)
<0.300Ω @V
GS
=10V, I
D
=10A
* High breakdown voltage
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
10N15L-TF1-T
10N15G-TF1-T
TO-220F1
10N15L-TN3-T
10N15G-TN3-T
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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QW-R502-939.b
10N15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 1)
V
DSS
150
V
Drain-Gate Voltage (R
GS
=20kΩ) (T
J
=25~125°C)
V
DGR
150
V
Gate-Source Voltage
V
GSS
±20
V
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
25
A
TO-220F1
62
W
Power Dissipation
P
D
TO-252
54
W
TO-220F1
0.48
W/°C
Linear Derating Factor
TO-252
0.43
W/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width is limited by maximum junction temperature.
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220F1
62.5
Junction to Ambient
θ
JA
°С/W
TO-252
110
TO-220F1
2
Junction to Case
θ
JC
°С/W
TO-252
2.3
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
150
V
1
µA
+100 nA
-100 nA
4
0.3
3.0
850
230
100
40
165
90
90
60
250
135
135
1.4
200
V
Ω
V
pF
pF
pF
ns
ns
ns
ns
V
ns
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=Rated BV
DSS
, V
GS
=0V
V
GS
=+20V, V
DS
=0V
Forward
Gate-Source
I
GSS
Leakage Current Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State
R
DS(ON)
V
GS
=10V, I
D
=10A
Resistance (Note 1)
Drain-Source On Voltage (Note 1)
V
DS(ON)
V
GS
=10V, I
D
=10A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=75V, V
GS
=10V,I
D
≈5A,
R
G
=50Ω, R
L
=14.7Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 1)
V
SD
I
SD
=5A
Diode Reverse Recovery Time
t
RR
I
SD
=4A, dl
SD
/dt=100A/µs
Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-939.b
10N15
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
R
D
90%
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-939.b
10N15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-939.b
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