UNISONIC TECHNOLOGIES CO., LTD
3N90
3A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N90
provides excellent R
DS(ON)
, low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 4.8
Ω
@ V
GS
= 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
RDERING INFORMATION
Package
TO-220
TO-230
TO-220F
TO-220F1
TO-220F2
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N90L-TA3-T
3N90G-TA3-T
3N90L-TC3-T
3N90G-TC3-T
3N90L-TF3-T
3N90G-TF3-T
3N90L-TF1-T
3N90G-TF1-T
3N90L-TF2-T
3N90G-TF2-T
3N90L-TQ2-T
3N90G-TQ2-T
3N90L-TQ2-R
3N90G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
3N90L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TC3: TO-230, TF3: TO-220F,
TF1: TO-220F1, TF2: TO-220F2, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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1 of 6
QW-R502-290.D
3N90
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
900
V
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
900
V
Gate-Source Voltage
V
GSS
±30
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30(MIN)
V
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-263
90
TO-230
Power Dissipation
P
D
W
TO-220F/TO-220F1
25
TO-220F2
26
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 40mH, I
AS
= 3A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≦3A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
θ
JC
RATING
62.5
1.38
5
4.9
°C/W
UNIT
°C/W
Junction to Ambient
Junction to Case
TO-220/ TO-263
TO-230
TO-220F/TO-220F1
TO-220F2
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2 of 6
QW-R502-290.D
3N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
900
V
Drain-Source Leakage Current
I
DSS
V
DS
=900V, V
GS
=0V
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
4.1 4.8
Ω
Forward Transconductance (Note 1)
g
FS
V
DS
=15V, I
D
=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
560
pF
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1MHz
69
pF
Reverse Transfer Capacitance
C
RSS
11
pF
Equivalent Output Capacitance (Note 2)
C
OSS(EQ)
V
GS
=0V, V
DS
=0V~400V
34
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
56
ns
Turn-On Rise Time
t
R
78
ns
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
Turn-Off Delay Time
t
D(OFF)
140
ns
Turn-Off Fall Time
t
F
72
ns
Total Gate Charge
Q
G
25.9
nC
V
DS
=50V, I
D
=1.3A, V
GS
=10V
Gate-Source Charge
Q
GS
7
nC
Gate-Drain Charge
Q
GD
7.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Source-Drain Current
I
SD
3
A
Source-Drain Current (Pulsed)
I
SDM
12
A
Notes: 1. Pulse width=300μs, Duty cycle≦1.5%
Note:
2. C
OSS(EQ)
is defined asa constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
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QW-R502-290.D
3N90
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-290.D
3N90
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
5 of 6
QW-R502-290.D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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