N-CHANNEL POWER MOSFET
| Parameter Name | Attribute value |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 2 A |
| Maximum drain-source on-resistance | 1.05 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 5 A |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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