UNISONIC TECHNOLOGIES CO., LTD
10N65K-MT
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
10N65K-MT
is an N-channel Power MOSFET using
UTC’s advanced technology to provide customers a minimum
on-state resistance and superior switching performance, etc.
The UTC
10N65K-MT
is generally applied in high efficient DC to
DC converters, PWM motor controls and bridge circuits, etc.
Power MOSFET
FEATURES
* R
DS(ON)
< 1.0Ω @ V
GS
=10V, I
D
= 5 A
* High Switching Speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
10N65KL-TA3-T
10N65KG-TA3-T
TO-220
10N65KL-TF3-T
10N65KG-TF3-T
TO-220F
10N65KL-TF1-T
10N65KG-TF1-T
TO-220F1
10N65KL-TF2-T
10N65KG-TF2-T
TO-220F2
10N65KL-TF3T-T
10N65KG-TF3T-T
TO-220F3
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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QW-R502-B24.D
10N65K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
10
A
Continuous
I
D
10
A
Drain Current
38
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
TO-220F/TO-220F1
Power Dissipation
P
D
50
W
TO-220F3
TO-220F2
48
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=8mH, I
AS
=10A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
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QW-R502-B24.D
10N65K-MT
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
V
DS
= 650V, V
GS
= 0V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
650
1
100
-100
2.0
4.0
1.0
V
µA
nA
nA
V
Ω
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Note: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature.
750 1500 pF
130 180 pF
9
20
pF
65
80
200
90
30
9
8
80
150
260
150
50
ns
ns
ns
ns
nC
nC
nC
V
A
A
1.4
10
38
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QW-R502-B24.D
10N65K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-B24.D
10N65K-MT
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-B24.D
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