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MGBR10S45CL-TN3-R

Description
DUAL MOS GATED BARRIER RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size137KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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MGBR10S45CL-TN3-R Overview

DUAL MOS GATED BARRIER RECTIFIER

MGBR10S45CL-TN3-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.45 V
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage45 V
Maximum reverse current500 µA
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE

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