TRENCHSTOP™ Series
IKB15N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IKB15N60T
V
CE
600V
I
C
15A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175C
Marking Code
K15T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C, value limited by bondwire
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
T
C
= 25C, value limited by bondwire
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpul s
-
I
F
I
Fpul s
V
GE
t
SC
P
tot
T
j
T
stg
-
Value
600
26
23
45
45
26
23
45
20
5
130
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.8 11.05.2015
IFAG IPC TD VLS
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .2m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 15 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 5 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 21 0µ A ,
V
C E
=
V
G E
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IKB15N60T
q
Max. Value
Unit
Symbol
Conditions
R
thJC
R
thJCD
R
thJA
6cm² Cu
1.15
1.9
40
K/W
Symbol
Conditions
Value
min.
600
-
-
-
-
4.1
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.05
-
2.05
-
5.7
Unit
V
µA
-
-
-
-
-
-
-
8.7
-
40
1000
100
-
nA
S
Ω
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 15 A
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 5 A
V
G E
= 15 V
-
-
-
-
-
860
55
24
87
7
137.5
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
5
s
V
C C
= 4 0 0 V,
T
j
150C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.8 11.05.2015
IFAG IPC TD VLS
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=8 2 5 A/
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=25
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
r
G
=15
,
L
=154nH,
C
=39pF
IKB15N60T
q
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
Typ.
17
11
188
50
0.22
0.35
0.57
34
0.24
10.4
718
max.
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=8 2 5 A/
s
-
-
-
-
140
1.0
14.7
495
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=175
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
r
G
=15
,
L
=154nH,
C
=39pF
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
Typ.
17
15
212
79
0.34
0.47
0.81
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.8 11.05.2015
TRENCHSTOP™ Series
IKB15N60T
q
t
p
=2µs
40A
10µs
I
C
,
COLLECTOR CURRENT
30A
T
C
=110°C
I
C
,
COLLECTOR CURRENT
T
C
=80°C
10A
50µs
20A
1A
1ms
DC
10ms
I
c
10A
I
c
0A
10Hz
100Hz
1kHz
10kHz
100kHz
0.1A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 15)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
120W
25A
P
tot
,
POWER DISSIPATION
100W
I
C
,
COLLECTOR CURRENT
20A
80W
15A
60W
10A
40W
5A
20W
0A
__
I
cmax
--- max. current limited by bondwire
50°C
75°C
100°C 125°C 150°C
25°C
50°C
75°C
100°C
125°C
150°C
0W
25°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.8 11.05.2015
TRENCHSTOP™ Series
40A
40A
35A
V
G E
=20V
15V
25A
20A
15A
10A
5A
0A
0V
1V
2V
3V
13V
11V
9V
7V
35A
V
G E
=20V
15V
13V
11V
20A
15A
10A
5A
0A
0V
1V
9V
7V
IKB15N60T
q
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
30A
30A
25A
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
35A
30A
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
I
C
=30A
I
C
,
COLLECTOR CURRENT
25A
20A
15A
10A
T
J
=175°C
5A
0A
0V
2V
4V
6V
8V
25°C
2.0V
1.5V
I
C
=15A
I
C
=7.5A
1.0V
0.5V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.8 11.05.2015
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