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RB521S-30

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 500mV@200mA Reverse current (Ir): 30μA@10V
File Size434KB,2 Pages
ManufacturerZRE
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DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 500mV@200mA Reverse current (Ir): 30μA@10V

RB521S-30 Parametric

Parameter NameAttribute value
Diode configuration-
DC reverse withstand voltage (Vr)30V
Average rectified current (Io)200mA
Forward voltage drop (Vf)500mV@200mA
Reverse current (Ir)30μA@10V
RB521S-30
SOD-523
SOD-523
贴片塑封肖特基二极管
SOD-523 Plastic-Encapsulate Schottky Barrier Diode
特征
Features
大电流承受½力。High
Current Capability
正向压降½。Low
Forward Voltage Drop
机械数据
Mechanical Data
MARKING: C
封装:
SOD-523
封装
SOD-523 Small Outline Plastic Package
极性: 色环端为负极
Polarity: Color band denotes cathode end
安装½½: 任意
Mounting Position: Any
极限值和温度特性(
TA = 25℃
除非另有规定)
Maximum Ratings & Thermal Characteristics
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
参数
Parameters
峰值反向电压
Peak reverse voltage
直流反向电压
DC reverse voltage
整理电流
Mean rectifying current
峰值正向浪涌电流
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
功率消耗
Power Dissipation
存储温度
Storage temperature range
结温
Junction Temperature
符号
Symbol
V
RM
V
R
Io
I
FSM
R
θJA
PD
T
STG
Tj
Limit
30
30
0.2
1.0
667
150
-50-+150
125
单½
Unit
V
V
A
A
℃/W
mW
电特性
(
TA = 25℃
除非另有规定)
Electrical Characteristics
(
Ratings at 25℃
参数
Parameters
最大正向电压
Maximum forward voltage
最大反向电压
Maximum reverse breakdown voltage
最大反向电流
Maximum reverse current
ambient temperature unless otherwise specified).
符号
Symbol
V
F
VR
I
R
测试条件
Test conditions
IF = 10mA
IF = 200mA
IR=1mA
VR=10V
Min
Typ
Max
单½
Unit
V
V
0.35
0.50
30
30
uA
Dated: 2019-12-7/A

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