AN26025A
Ultra small, Single Band LNA-IC for 5 GHz Band Applications
FEATURES
•
Low voltage operation
•
Low current consumption
7.5 mA typ.
7.5 µA typ.
•
High gain
•
Low noise figure
•
Low distortion
14 dB typ.
1.65 dB typ.
+5 dBm typ.
(High-Gain mode)
(Low-Gain mode)
(High-Gain mode)
(High-Gain mode)
(High-Gain mode)
+3.3 V typ.
DESCRIPTION
AN26025A is a single band LNA (Low Noise Amplifier)-
IC for 5 GHz Band applications.
Realizing high performance by using 0.18 µm SiGeC Bi-
CMOS process (f
T
= 90 GHz, f
max
= 140 GHz).
High/Low Gain-mode is changeable, controlled by
integrated CMOS logic circuit.
Achieving miniaturization by using small size Wafer
Level Chip Size Package (WLCSP).
•
5 pin Wafer level chip size package (WLCSP)
APPLICATIONS
WLAN
SIMPLIFIED APPLICATION
TOP VIEW
50
Ω
RF output
V
CC
A3
B3
C3
A2
Components
L1
C1
C2
C3
Size
0603
0603
0603
0603
Value
1.0 nH
0.5 pF
1 000 pF
100 000 pF
Part Number
LQP03TN1N0B02
GRM0334C1HR50WD01D
GRM033B11C102KD01
GRM33B30J104KE18
Vendor
Murata
Murata
Murata
Murata
Notes)
This application circuit is an example. The operation of mass
A1
L1
B1
CNT
(Gain cnt)
production set is not guaranteed. You should perform enough
evaluation and verification on the design of mass production
set. You are fully responsible for the incorporation of the
above application circuit and information in the design of your
equipment.
C1
C2
RF input
50
Ω
Publication date: February 2013
1
Ver. CEB
AN26025A
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Supply current
Operating ambient temperature
Operating junction temperature
Storage temperature
Symbol
V
CC
I
CC
T
opr
T
j
T
stg
IN (Pin No.A1)
Output Voltage Range
CNT (Pin No.B1)
OUT (Pin No.A3)
ESD
HBM (Human Body Model)
Rating
3.7
18
–40 to +85
-40 to +125
–55 to +150
—
-0.3 to V
CC
-0.3 to V
CC
2
Unit
V
mA
°C
°C
°C
V
V
V
kV
Note
*1
—
*2
*2
*2
*3
—
—
—
Notes). This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating.
This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated
recommended operating range.
When subjected under the absolute maximum rating for a long time, the reliability of the product may be affected.
*1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
*2:Except for the operating ambient temperature, operating junction temperature and storage temperature,
all ratings are for Ta = 25°C.
*3:RF signal input pin. Do not apply DC. Do not apply more than 0 dBm to RF input.
POWER DISSIPATION RATING
PACKAGE
WLCSP
θ
JA
1391℃/W
PD (Ta=25
°C)
0.090W
PD (Ta=85
°C)
0.047W
Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, supply
voltage, load and ambient temperature conditions to ensure that there is enough margin follow the power and
the thermal design does not exceed the allowable value.
CAUTION
Although this has limited built-in ESD protection circuit, but permanent damage may occur on it.
Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage range
Symbol
V
CC
Min.
2.7
Typ.
3.3
Max.
3.6
Unit
V
Note
*1
Note) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
2
Ver. CEB
AN26025A
ELECRTRICAL CHARACTERISTICS
Note) Ta = 25°C±2°C,
Vcc = 3.3 V
Parameter
DC electrical characteristics
Supply current HG
Supply current LG
Input voltage (High-Gain mode)
Input voltage (Low-Gain mode)
SW current (High)
Symbol
Condition
Min
Limits
Typ
Max
Unit Note
IccH
IccL
VIH
VIL
IIH
Vcc current at High-Gain
mode, No input signal
Vcc current at Low-Gain
mode, No input signal
—
—
Current at CNT pin
VIH = Vcc
—
—
1.48
0
—
7.5
7.5
—
—
19
10
15
3.6
0.6
30
mA
μA
V
V
μA
—
—
—
—
—
ELECRTRICAL CHARACTERISTICS (continued)
Note) Ta = 25°C±2°C,
Vcc = 3.3 V,
fRX = 5.50 GHz, PRX = –30 dBm, CW unless otherwise specified.
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
GHS
GLS
High-Gain mode
Low-Gain mode
12.0
–12.6
14.0
–10.5
16.0
–8.4
dB
dB
—
—
Symbol
Condition
Limits
Typ
Unit Note
Min
Max
3
Ver. CEB
AN26025A
APPLICATION INFORMATION
REFERENCE VALUES FOR DESIGN
Notes) Vcc = 3.3 V, Ta = 25°C±2°C,
fRX = 5.15 GHz, 5.5 GHz, 5.85 GHz, PRX = –30 dBm, CW unless otherwise specified.
Reference values
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
Noise Figure HG
Noise Figure LG
IIP3
–10 MHz offset HG
GHa
GLa
NFHa
NFLa
High-Gain mode
Low-Gain mode
High-Gain mode
Low-Gain mode
High-Gain mode
f1 = fRX – 10 MHz
f2 = fRX – 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
f1 = fRX + 10 MHz
f2 = fRX + 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
Low-Gain mode
f1 = fRX
f2 = fRX + 100 kHz
Input 2 signals (f1, f2)
Low-Gain mode
High-Gain mode
Low-Gain mode
High-Gain mode
Low-Gain mode
High-Gain mode
Low-Gain mode
11.5
–13
—
—
14
–10.5
1.9
10.5
16.5
–8
2.25
13.5
dB
dB
dB
dB
*1
*1
*1,*2
*1,*2
Symbol
Conditions
Min
Typ
Max
Unit
Note
IIP3H1a
–1
5
—
dBm
*1
IIP3
+10 MHz offset HG
Input P1dB HG
IIP3
+100 kHz offset LG
Input P1dB LG
Reverse Isolation HG
Reverse Isolation LG
Input Return Loss HG
Input Return Loss LG
Output Return Loss HG
Output Return Loss LG
IIP3H2a
–1
4
—
dBm
*1
IP1dBHa
–13.5
-9
—
dBm
*1
IIP3La
10
25
—
dBm
*1
IP1dBLa
ISOHa
ISOLa
S11Ha
S11La
S22Ha
S22La
0
21
8
6.5
3.5
9
5
9
26
10.5
12
5
16
6.5
—
—
—
—
—
—
—
dBm
dB
dB
dB
dB
dB
dB
*1
*1
*1
*1
*1
*1
*1
Note) *1 : Checked by design, not production tested.
*2 : RF input Connector & substrate loss (0.26 dB) included.
4
Ver. CEB
AN26025A
APPLICATION INFORMATION (continued)
REFERENCE VALUES FOR DESIGN (continued)
Notes) Vcc = 3.0 V to 3.6 V
Ta = –40°C to 85°C unless otherwise specified.
Reference values
Parameter
DC electrical characteristics
Supply current HG
Supply current LG
SW current (High)
IccHT
IccLT
IIHT
Vcc current at High-Gain mode
No input signal
Vcc current at Low-Gain mode
No input signal
Current at CNT pin
VIH = Vcc
—
—
—
7.5
7.5
19
12
18
35
mA
μA
μA
*1
*1
*1
Symbol
Conditions
Min
Typ
Max
Unit
Note
Note) *1 : Checked by design, not production tested.
5
Ver. CEB
京公网安备 11010802033920号
EEWORLD
