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D390CH19FF0

Description
Silicon Controlled Rectifier, 1590000mA I(T), 1900V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size464KB,4 Pages
ManufacturerIXYS
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D390CH19FF0 Overview

Silicon Controlled Rectifier, 1590000mA I(T), 1900V V(DRM),

D390CH19FF0 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal circuit commutation break time50 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
Maximum leakage current100 mA
On-state non-repetitive peak current14800 A
Maximum on-state voltage2.1 V
Maximum on-state current1590000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1900 V
surface mountNO
Trigger device typeSCR

D390CH19FF0 Related Products

D390CH19FF0 D390CH19DF0 D390CH19F2G0
Description Silicon Controlled Rectifier, 1590000mA I(T), 1900V V(DRM), Silicon Controlled Rectifier, 1590000mA I(T), 1900V V(DRM), Silicon Controlled Rectifier, 1590000mA I(T), 1900V V(DRM),
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Nominal circuit commutation break time 50 µs 50 µs 70 µs
Critical rise rate of minimum off-state voltage 200 V/us 50 V/us 200 V/us
Maximum DC gate trigger current 300 mA 300 mA 300 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V
Maximum holding current 1000 mA 1000 mA 1000 mA
Maximum leakage current 100 mA 100 mA 100 mA
On-state non-repetitive peak current 14800 A 14800 A 15000 A
Maximum on-state voltage 2.1 V 2.1 V 2.1 V
Maximum on-state current 1590000 A 1590000 A 1590000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 1900 V 1900 V 1900 V
surface mount NO NO NO
Trigger device type SCR SCR SCR

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