BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• General purposes
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
BAV17
BAV18
BAV19
BAV20
BAV21
TYPE
DIFFERENTIATION
V
RRM
= 25 V
V
RRM
= 60 V
V
RRM
= 120 V
V
RRM
= 200 V
V
RRM
= 250 V
ORDERING CODE
BAV17-TR or BAV17-TAP
BAV18-TR or BAV18-TAP
BAV19-TR or BAV19-TAP
BAV20-TR or BAV20-TAP
BAV21-TR or BAV21-TAP
TYPE MARKING
BAV17
BAV18
BAV19
BAV20
BAV21
CIRCUIT
CONFIGURATION
Single
Single
Single
Single
Single
REMARKS
Tape and reel / ammopack
Tape and reel / ammopack
Tape and reel / ammopack
Tape and reel / ammopack
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BAV17
BAV18
Repetitive peak reverse voltage
BAV19
BAV20
BAV21
BAV17
BAV18
Reverse voltage
BAV19
BAV20
BAV21
Forward continuous current
Peak forward surge current
Forward peak current
Power dissipation
t
p
= 1 s, T
j
= 25 °C
f = 50 Hz
SYMBOL
V
RRM
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FRM
P
tot
VALUE
25
60
120
200
250
20
50
100
150
200
250
1
625
500
UNIT
V
V
V
V
V
V
V
V
V
V
mA
A
mA
mW
Rev. 1.9, 12-Jul-17
Document Number: 85543
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
300
175
-65 to +175
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
Reverse current
V
R
= 200 V
T
j
= 100 °C, V
R
= 20 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100 V
T
j
= 100 °C, V
R
= 150 V
T
j
= 100 °C, V
R
= 200 V
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV19
BAV20
BAV21
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
= 0 V, f = 1 MHz,
I
F
= 10 mA
I
F
= I
R
= 30 mA, i
R
= 3 mA
R
L
= 100
Ω
PART
SYMBOL
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
25
60
120
200
250
1.5
5
50
MIN.
TYP.
MAX.
1
100
100
100
100
100
15
15
15
15
15
UNIT
V
nA
nA
nA
nA
nA
μA
μA
μA
μA
μA
V
V
V
V
V
pF
Ω
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
100
Scattering Limit
10
1000
T
j
= 25 °C
I
R
- Reverse Current (µA)
I
F
- Forward Current (mA)
100
Scattering Limit
10
1
V
R
= V
RRM
0.1
0.01
0
40
80
120
1
0.1
160
200
94 9085
0
0.4
0.8
1.2
1.6
2.0
94 9084
T
j
- Junction Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.9, 12-Jul-17
Document Number: 85543
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
r
f
- Differential Forward Resistance (
Ω
)
1000
100
T
j
= 25 °C
10
1
0.1
1
10
100
94 9089
I
F
- Forward Current (mA)
Fig. 3 - Differential Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35 (DO-204AH)
Cathode Identification
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.9, 12-Jul-17
Document Number: 85543
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.3 [0.050]
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000