2SD813 datasheet, PDF - EEWORLD Datasheet

2SD813: DescriptionSmall-signal device - Small-signal transistor - General-use Low-Frequency Amplifires; CategoryDiscrete semiconductor The transistor; File Size267KB，6 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD813 Overview

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Configuration	Single
Minimum DC current gain (hFE)	65
JESD-609 code	e0
Maximum operating temperature	125 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

	2SD813	2SD836	2SD836A
Description	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	0.5 A	2 A	2 A
Configuration	Single	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	65	1000	1000
JESD-609 code	e0	e0	e0
Maximum operating temperature	125 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	35 W	35 W
surface mount	YES	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1

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