INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1738
DESCRIPTION
·High
Voltage
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1500
V
V
CES
Collector-Emitter Voltage
1500
V
V
CEO
Collector-Emitter Voltage
700
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
5
A
I
CP
Collector Current-Peak
15
A
I
B
B
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
2
A
P
C
100
W
℃
T
j
150
T
stg
Storage Temperature Range
-55-150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1738
TYP
MAX
UNIT
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 500mA; I
C
= 0
7
V
V
CE(
sat
)
V
BE(
sat
)
h
FE
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 1A
B
8.0
V
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 1A
B
1.5
V
DC Current Gain
I
C
= 1A; V
CE
= 5V
V
CB
= 750V; I
E
= 0
6
30
μA
10
I
CBO
Collector Cutoff Current
V
CB
= 1500V; I
E
= 0
1.0
mA
f
T
Transition Frequency
I
C
= 1A; V
CE
= 10V
2
MHz
Switching Times, Resistive Load
μs
μs
t
s
t
f
Storage Time
I
C
= 4A; I
B1
= 0.8A; I
B2
= -1.6A,
V
CC
= 200V
Fall Time
1.5
0.2
isc Website：www.iscsemi.cn
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