SEMICONDUCTOR
4PT Series
Sensitive gate SCRs, 4A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
600 to 800
10 to
2
00
Unit
A
2
2
1
2
3
V
µA
1
2
3
TO-251
(I-PAK)
(4PTxxF)
TO-252
(D-PAK)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the available
gate current is limited, such as motor control for hand
tools, kitchen aids, capacitive discharge ignitions,
overvoltage crowbar protection for low power supplies
among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(4PTxxA)
2
(A2)
TO-220AB
(lnsulated)
(4PTxxAI)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
Tc=115°C
Tc=110°C
Tc=115°C
Tc=110°C
t = 20 ms
t = 16.7 ms
2.5
30
33
4.5
50
1.2
0.2
600 and 800
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
V
A
VALUE
4
UNIT
A
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Page 1 of 6
SEMICONDUCTOR
4PT Series
(T
J
= 25
ºC unless otherwise specified
)
4PTxxxx
Min.
Max.
Max.
Min.
Max.
Min.
Min.
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
Max.
Max.
Max.
10
200
0.8
0.1
5
6
10
1.6
5
0.5
RoHS
RoHS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 30
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
D
= V
DRM
, R
L
= 3.3K
R
GK
= 220 , T
j
= 125°C
I
T
= 50mA, R
GK
= 1K
I
G
= 1mA, R
GK
= 1K
TEST CONDITIONS
Unit
µA
V
V
mA
mA
V/µs
V
µA
mA
V
D
= 67% V
DRM
, R
GK
= 1K , T
j
= 125°C
I
T
= 8A, t
P
= 380 µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case (DC)
S = 0.5 cm
2
R
th(j-a)
Junction to ambient
Parameter
IPAK/DPAK/TO-220AB
TO-252(D-PAK)
TO-220AB
TO-251(I-PAK)
VALUE
2.8
70
60
100
°C/W
UNIT
°C/W
PRODUCT SELECTOR
VOLTAGE
(
x x
)
PART NUMBER
600
V
4PTxxA-S/4PTxxAl-S
4PTxxA-03/4PTxxAl-03
4PTxxA-05/4PTxxAl-05
4PTxxA-06/4PTxxAl-06
4PTxxA-08/4PTxxAl-08
4PTxxF-S
4PTxxF-03
4PTxxF-05
4PTxxF-06
4PTxxF-08
4PTxxG-S
4PTxxG-03
4PTxxG-05
4PTxxG-06
4PTxxG-08
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
70~200
µ
A
10~30
µ
A
20~30
µ
A
30~60
µ
A
50~80
µ
A
70~200
µ
A
10~30
µ
A
20~30
µ
A
30~60
µ
A
50~80
µ
A
70~200
µ
A
10~30
µ
A
20~30
µ
A
30~60
µ
A
50~80
µ
A
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
I-PAK
I-PAK
I-PAK
I-PAK
I-PAK
D-PAK
D-PAK
D-PAK
D-PAK
D-PAK
SENSITIVITY
PACKAGE
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Page 2 of 6
SEMICONDUCTOR
4PT Series
RoHS
RoHS
ORDERING INFORMATION
ORDERING TYPE
4PTxxA-yy
4PTxxAI-yy
4PTxxF-yy
4PTxxG-yy
Note:
xx = voltage, yy = sensitivity
MARKING
4PTxxA-yy
4PTxxAI-yy
4PTxxF-yy
4PTxxG-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
,
BASE Q TY
50
50
80
80
DELIVERY MODE
Tube
Tube
Tube
Tube
ORDERING INFORMATION SCHEME
4 PT 06
Current
4 = 4A, I
T(RMS)
- S
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum average power dissipation versus
on-state current
P(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
360°
α=180°
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig.2 Average and DC on-state current versus
case temperature
I
T(AV)
(A)
DC
TO-220AB
Insulated
α=180°
TO-251/TO-252
TO-220AB
I
T(AV)
(A)
1.5
2.0
α
T case (°C)
0
25
50
75
100
125
2.5
3.0
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Page 3 of 6
SEMICONDUCTOR
4PT Series
RoHS
RoHS
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
IPAK
DC
α=180°
I
T
(AV)(A)
Device mounted on FR4 with
recommended pad layout
DC
α=180°
DPAK (S = 0.5
cm
²)
1E+0
Fig.4 Relative variation of thermal impedance
junction to ambient versus pulse duration
(DPAK)
K=[Zth(j-c)/Rth(j-c)]
Z th(j-c)
1E-1
Z th(j-a)
1E-2
Device mounted on FR4 with
recommended pad layout
T amb (°C)
50
75
100
125
1E-3
1E-3
t p (s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 Relative variation of gate trigger current
and holding current versus junction
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
Fig.6 Relative variation of holding current
versus gate-cathode resistance
(typical values)
I
H
[R
GK
] / I
H
[R
GK
=1KΩ
5
4
Tj=25
°
C
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25 C]
I
GT
l
hand
IL
R
GK
=1K
3
2
T j (°C)
-20
0
20
40
60
80
100
120
140
1
R
GK
(K )
0
1E-2
1E-1
1E+0
1E+1
Fig.7 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
10.00
Fig.8 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
10
8
dV/dt[R
GK
] / dV/dt[R
GK
=220Ω]
Tj=125 C
V
D
=0.67 X V
DRM
dV/dt[C
GK
] / dV/dt[R
GK
=220Ω]
V
D
=0.67 X V
DRM
T
j
=125
°
C
R GK =220
1.00
6
4
0.10
2
0.01
R
GK
(KΩ)
0
0
2
4
6
8
C
GK
(nF)
0
200 400 600 800 1000 1200 1400 1600 1800 2000
10
12
14
16
18
20
22
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Page 4 of 6
SEMICONDUCTOR
4PT Series
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
I
TSM
(A),I²t(A²s)
300
Tj inital=25
°
C
RoHS
RoHS
Fig.9 Surge peak on-state current versus
number of ctcles
35
30
I
TSM
(A)
tp=10ms
dI/dt Iimitation
100
I
TSM
25
20
15
10
5
0
1
10
Repetitive
Tc=115°C
Non repetitive
Tj inital=25°C
One cycle
10
I²t
Sinusoidal pulse with
width < 10ms
Number of cycles
100
1000
1
0.01
0.10
t p (ms)
1.00
10.00
Fig.11 On-state characteristics (maximum
values)
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
R
th
(j-a)(
°
C/W)
100
80
60
40
20
Epoxy printed circuit board FR4
copper thickness = 35µm
50.0
I
TM
(A)
Tjmax
V
t0
=0.85V
Rd=90mΩ
10.0
Tj=max
1.0
Tj=25
°
C
RoHS
S(cm²)
0
2
4
6
8
10
12
14
16
18
20
0
0.1
0.0
0.5
1.0
1.5
V
TM
(V)
0
2.0
2.5
3.0
3.5
4.0
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Page 5 of 6
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