TSA1765 datasheet, PDF - EEWORLD Datasheet

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TSA1765: DescriptionHigh Voltage PNP Epitaxial Planar Transistor; File Size124KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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TSA1765 Overview

High Voltage PNP Epitaxial Planar Transistor

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TSA1765

High Voltage PNP Epitaxial Planar Transistor

SOT-223

Pin Definition:

1. Base

2. Collector

3. Emitter

PRODUCT SUMMARY

CBO

CEO

CE(SAT)

-600V

-560V

-150mA

-0.5V @ I

/ I

= -50mA / -10mA

Features

●

Low Saturation Voltages

High Breakdown Voltage

Ordering Information

Part No.

TSA1765CW RP

Package

SOT-223

Packing

2.5Kpcs / 13” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current(Pulse)

Base Current

Total Power Dissipation @ T

=25ºC

Operating Junction Temperature

Operating Junction and Storage Temperature Range

Symbol

CBO

CEO

EBO

tot

STG

Limit

-600

-560

-7

-150

-500

-50

+150

- 55 to +150

Unit

Electrical Specifications

(Ta = 25

C unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Conditions

= -1mA, I

= 0

= -1mA, I

= 0

= -10uA, I

= 0

= -600V, I

= 0

= -7V, I

= 0

= -20mA, I

= -2mA

= -50mA, I

= -10mA

= -50mA, I

= -10mA

= -10V, I

= -50mA

= -10V, I

= -1mA

= -10V, I

= -50mA

= -10V, I

= -100mA

= -20V, I

=-10mA

= -20V, f=1MHz

Symbol

CBO

CEO

EBO

CBO

EBO

CE(SAT)

BE(SAT)

BE(ON)

Cob

Min

-600

-560

-7

150

Typ

15--

Max

-100

-0.2

-0.5

-1.0

300

Unit

MHz

1/4

Version: B11

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