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SS3P6

Description
3 A, 60 V, SILICON, RECTIFIER DIODE, DO-220AA
Categorysemiconductor    Discrete semiconductor   
File Size104KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SS3P6 Overview

3 A, 60 V, SILICON, RECTIFIER DIODE, DO-220AA

New Product
SS3P5 & SS3P6
Vishay General Semiconductor
High-Current Density Surface Mount Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
3.0 A
50 V, 60 V
45 A
11.25 mJ
0.61 V
150 °C
eSMP
TM
Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 3.0 A
T
J
max.
MECHANICAL DATA
Case:
DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 °C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
dV/dt
T
J,
T
STG
SYMBOL
SS3P5
35
50
3.0
45
11.25
10 000
- 55 to + 150
SS3P6
36
60
V
A
A
mJ
V/us
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum reverse current at rated V
R (2)
Typical junction capacitance
4.0 V, 1 MHz
TEST CONDITIONS
I
F
= 3 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.71
0.61
-
2.0
80
MAX.
0.78
0.65
100
10
UNIT
V
µA
mA
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
Document Number: 88997
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

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SS3P6 SS3P5 SS3P6-E3/85A
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