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SS13

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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SS13 Overview

SIGNAL DIODE

SS13 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
SS12 THRU SS110
SCHOTTKY BARRIER RECTIFIER
VOLTAGE:20-100V
CURRENT:1.0A
FEATURES
·High
reliability
·Low
leakage
·Low
forward voltage
·High
current capability
·Super
fast switching speed
·High
surge capability
·Good
for switching mode circuit
SMA(DO-214AC)
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.012(0.305)
.006(0.152)
.114(2.90)
.098(2.50)
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.064 grams
.096(2.44)
.078(2.00)
.060((1.52)
.030(0.76)
.008(0.203)
.002(0.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
SS12 SS13
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified
Currentat TA=55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rate load
(JEDEC method)
Maximum Instantaneous forward Voltage at
1.0A DC
Maximum DC Reverse Current at Rated
DC Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full
Cycle Average,.375”(9.5mm) lead length at
T
L
=75°C
Typical Junction Capacitance (Note 2)
Notes:
I
R
C
J
15
10
pF
100
V
F
I
FSM
0.45
0.55
0.6
1
µA
30
0.7
0.85
A
V
I
o
1
A
V
RRM
V
RMS
V
DC
20
14
20
30
21
30
SS14
40
28
40
SS15
50
35
50
SS16
60
42
60
SS18
80
56
80
SS110
100
70
100
units
V
V
V
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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