LM321AH datasheet, PDF - EEWORLD Datasheet

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LM321AH: DescriptionLM221/LM321 Precision Preamplifiers; CategoryAnalog mixed-signal IC Amplifier circuit; File Size208KB，11 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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LM321AH Overview

LM221/LM321 Precision Preamplifiers

LM321AH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Parts packaging code	BCY
package instruction	, CAN8,.2
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Amplifier type	INSTRUMENTATION AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.15 µA
Maximum bias current (IIB) at 25C	0.15 µA
Minimum Common Mode Rejection Ratio	126 dB
frequency compensation	YES
Maximum input offset current (IIO)	0.01 µA
Maximum input offset voltage	400 µV
JESD-30 code	O-MBCY-W8
JESD-609 code	e0
low-dissonance	YES
Negative supply voltage upper limit	-20 V
Number of functions	1
Number of terminals	8
Maximum operating temperature	70 °C
Minimum operating temperature
Package body material	METAL
Encapsulate equivalent code	CAN8,.2
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	+-3/+-20 V
Programmable power	YES
Certification status	Not Qualified
Maximum slew rate	3.5 mA
Supply voltage upper limit	20 V
surface mount	NO
technology	BIPOLAR
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Minimum voltage gain	12
Nominal voltage gain	20
Base Number Matches	1

LM321AH Related Products

	LM321AH	LM121AH/883	LM121H/883	LM221	LM221H	LM321H
Description	LM221/LM321 Precision Preamplifiers	LM221/LM321 Precision Preamplifiers	LM221/LM321 Precision Preamplifiers	LM221/LM321 Precision Preamplifiers	LM221/LM321 Precision Preamplifiers	LM221/LM321 Precision Preamplifiers
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	incompatible
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）
Reach Compliance Code	unknow	compli	unknow	-	unknow	unknow
Amplifier type	INSTRUMENTATION AMPLIFIER	OPERATIONAL AMPLIFIER	-	-	INSTRUMENTATION AMPLIFIER	INSTRUMENTATION AMPLIFIER
Architecture	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	-	-	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C	0.15 µA	0.1 µA	-	-	0.1 µA	0.18 µA
frequency compensation	YES	YES	-	-	YES	YES
Maximum input offset voltage	400 µV	650 µV	-	-	700 µV	1500 µV
JESD-30 code	O-MBCY-W8	O-MBCY-W8	O-MBCY-W8	-	O-MBCY-W8	O-MBCY-W8
JESD-609 code	e0	e0	e0	-	e0	e0
low-dissonance	YES	YES	-	-	NO	NO
Number of functions	1	1	1	-	1	1
Number of terminals	8	8	8	-	8	8
Maximum operating temperature	70 °C	125 °C	85 °C	-	85 °C	70 °C
Package body material	METAL	METAL	METAL	-	METAL	METAL
Encapsulate equivalent code	CAN8,.2	CAN8,.2	-	-	CAN8,.2	CAN8,.2
Package shape	ROUND	ROUND	ROUND	-	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
power supply	+-3/+-20 V	+-3/+-20 V	-	-	+-3/+-20 V	+-3/+-20 V
Programmable power	YES	YES	-	-	YES	YES
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum slew rate	3.5 mA	2.5 mA	-	-	2.5 mA	3.5 mA
Supply voltage upper limit	20 V	20 V	-	-	20 V	20 V
surface mount	NO	-	NO	-	NO	NO
technology	BIPOLAR	BIPOLAR	BIPOLAR	-	BIPOLAR	BIPOLAR
Temperature level	COMMERCIAL	MILITARY	OTHER	-	OTHER	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	-	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Minimum voltage gain	12	20	-	-	16	12
Base Number Matches	1	1	1	-	1	1

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