PNP Epitaxial Planar Transistor
FMBT4403
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2,3
Switching time equivalent test circuits................................................ 4
Rating and characteristic curves........................................................ 5, 6
Pinning information........................................................................... 7
Marking........................................................................................... 7
Suggested solder pad layout............................................................. 7
Packing information.......................................................................... 8
Reel packing.................................................................................... 9
Suggested thermal profiles for soldering processes............................. 9
High reliability test capabilities.......................................................... 10
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 1
DS-231118
PNP Epitaxial Planar Transistor
FMBT4403
600mA Silicon PNP Epitaxial Planar
Transistor
Features
0.045 (1.15)
Formosa MS
Package outline
SOT-23
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
•
Epitaxial plana chip construction
•
Ideal for medium power application and switching
•
Capable of 225mW power dissipation.
•
Lead-free parts for green partner, exceeds environmental
•
standards of MIL-STD-19500 /228
Suffix "-H" dinicates Halogen-free part, ex.FMBT4403-H.
0.034 (0.85)
0.020 (0.50)
(C)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
0.007 (0.18)
0.003 (0.09)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
T = 25 C
Total device dissipation FR-5 board
A
(1)
Derate above 25
O
C
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Operating temperature
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Junction to ambient
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
O
O
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
θJA
P
D
P
D
R
θJA
T
J
T
STG
MIN.
0.012 (0.30)
TYP.
MAX. UNIT
-40
-40
-5.0
-600
225
1.8
556
300
2.4
417
V
V
V
mA
mW
mW/
O
C
O
C/W
mW
O
mW/ C
O
C/W
o
-55
-65
+150
+150
C
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 2
DS-231118
PNP Epitaxial Planar Transistor
FMBT4403
Characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
CONDITIONS
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
BL
I
CEX
MIN.
-40
-40
-5.0
-0.1
-0.1
TYP.
MAX. UNIT
V
V
V
µA
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
I
c
= -0.1mA, I
E
= 0
I
c
= -1.0mA, I
B
= 0
I
E
= -0.1mA, I
C
= 0
V
CE
= -35Vdc, V
EB
= -0.4 Vdc
V
CE
= -35Vdc, V
EB
= -0.4Vdc
On characteristics(3)
PARAMETER
CONDITIONS
I
c
= -0.1mA, V
CE
= -1.0V
I
c
= -1.0mA, V
CE
= -1.0V
DC current gain
I
c
= -10mA, V
CE
= -1.0V
I
c
= -150mA, V
CE
= -1.0V
I
c
= -500mA, V
CE
= -2.0V
Collector-Emitter saturation voltage(3)
I
c
= 150mA, I
B
= 15mA
I
c
= 500mA, I
B
= 50mA
Base-Emitter saturation voltage(3)
I
c
= 150mA, I
B
= 15mA
I
c
= 500mA, I
B
= 50mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Symbol
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
1.5
0.1
60
1.0
MIN.
200
8.5
30
15
8.0
500
100
TYP.
MAX. UNIT
MHz
pF
Vdc
pF
kohms
Symbol
MIN.
30
60
TYP.
MAX. UNIT
h
FE
100
100
20
300
-
V
CE(sat)
0.75
-0.4
-0.75
Vdc
V
BE(sat)
-0.95
-1.30
Vdc
Current-gain-bandwidth product(4) I
C
= -20mA, V
CE
= -10V, f = 100MHz
Output capacitance
Input capacitance
Input impedance
Voltage feeback radio
Small-signal current gain
Output admittance
V
CB
= -10V, I
E
= 0, f = 1.0MHz
V
EB
= -0.5V, I
C
= 0, f = 1.0MHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
X 10
-4
-
µmhos
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
V
CC
= -30V, I
C
=-150mA, I
B1
= I
B2
= -15mA
V
CC
= -30V, V
BE
= -2.0V
dc
, I
C
= -150mA, I
B1
= -15mA
CONDITIONS
Symbol
td
tr
ts
tf
MIN.
TYP.
MAX. UNIT
15
20
225
30
ns
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 3
DS-231118
PNP Epitaxial Planar Transistor
FMBT4403
Switching time equivalent test circuits
-30
V
<
2 ns
+2
V
0
1.0 kΩ
-16
V
10 to 100 us,
DUTY CYCLE
=
2%
CS
* <
10 pF
200
Ω
+14
V
0
1.0 kΩ
-16
V
1.0 to 100 us,
DUTY CYCLE=2%
<
20 ns
Formosa MS
-30
V
200
Ω
CS
* <
10 pF
+4.0V
Scope rise time < 4.0 ns
*T
otal shunt capacitance of test jig connectors, and oscilloscope
Figure
1. Turn-On T ime
Figure
2. Turn-Off T ime
TRANSIENTCHARACTERISTICS
25 C
30
20
CAPACITANCE
(pF)
10
7.0
5.0
Ceb
Q, CHARGE
(nC)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
2.0
0.1
0.1
10
125 C
VCC = 30 V
IC
/I
B = 10
10
7.0
5.0
Ccb
QT
QA
0.2 0.3 0.50.7 1.0 2.0 3.0 5.07.0 10
REVERSE VOLTAGE
(VOLTS
)
20 30
20
200 300
30
50 70 100
IC
,
COLLECT CURRENT
(mA)
OR
500
Figure 3. Capacitances
Figure 4. Charge Data
100
70
50
t, TIME
(ns)
30
20
tr @ V = 30 V
CC
tr @ V = 10 V
CC
td @ V
BE(of = 2 V
f)
td @ V
BE(of = 0
f)
IC
/I
B= 10
tr
,
RISE TIME
(ns)
100
70
50
30
20
VCC = 30 V
IC
/I
B = 10
10
7.0
5.0
10
20
30
50
70
100
200
300
500
10
7.0
5.0
10
20
30
50
70 100
200
300
500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Rise Time
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 4
DS-231118
Rating and characteristic curves (FMBT4403)
200
IC
/I
B= 10
ts4, STORAGE TIME (ns)
100
70
50
IB1 = IB2
t s4= ts - 1/8 tf
30
20
IC
/I
B= 20
10
20
30
50
70
100
200
300
500
IC
,
COLLECTOR CURRENT
(mA)
Figure 7. Storage Time
h P ARAMETERS
VCE = ±10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other h parameters for this series of transistors. To
hie
,
INPUT IMPEDANCE (OHMS)
1000
700
500
hfe
,
CURRENTGAIN
300
200
FMBT4403
FMBT4403
UNIT 1
UNIT 2
100k
50k
20k
10k
5k
2k
1k
obtain these curves, a high±gain and a low±gain unit were
selected from the FMBT4403 lines, and the same units
were used to develop the correspondingly±numbered curves
on each graph.
FMBT4403 UNIT 1
FMBT4403 UNIT 2
100
70
50
30
0.1
500
200
100
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC
,
COLLECTOR CURRENT
(mAdc)
hr e , VOLTAGE FEEDBACK RATIO (X 10-4 )
IC
,
COLLECTOR CURRENT
(mAdc)
Figure 10. Current Gain
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
FMBT4403
FMBT4403
UNIT 1
UNIT 2
ho e , OUTPUT ADMITTANCE (u mhos)
500
Figure 11. Input Impedance
100
50
20
10
5.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
FMBT4403
FMBT4403
UNIT 1
UNIT 2
IC
,
COLLECTOR CURRENT
(mAdc)
IC
,
COLLECTOR CURRENT
(mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 5
DS-231118
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