ES1A datasheet, PDF - EEWORLD Datasheet

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ES1A: Description1 A, 50 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size38KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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ES1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1A Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMA, 2 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0200 us
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	1 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

ES1A THRU ES1J

SUPER FAST RECOVERY RECTIFIER

VOLTAGE：50-400V

CURRENT：1.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage

·High

current capability

·Super

fast switching speed

·High

surge capability

·Good

for switching mode circuit

SMA(DO-214AC)

.062(1.60)

.055(1.40)

.181(4.60)

.157(4.00)

.012(0.305)

.006(0.152)

.114(2.90)

.098(2.50)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.064 grams

.096(2.44)

.078(2.00)

.060((1.52)

.030(0.76)

.008(0.203)

.002(0.051)

.208(5.28)

.188(4.80)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

ES1A

ES1B

100

ES1C

150

105

150

1.0

0.95

5.0

ES1D

200

140

200

ES1E

300

210

300

ES1J

400

280

400

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

=55°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 1.0A

Maximum DC Reverse Current at Rated DC

Blocking Voltage T

=25°C

RRM

RMS

FSM

1.25

Maximum Full Load Reverse Current Full Cycle

Average,.375”(9.5mm) lead length at T

=75°C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Notes: 1.Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0 volts

µA

100

１

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ES1A Related Products

	ES1A	ES1B	ES1C	ES1D	ES1E	ES1J
Description	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	2	2	2	-	2
Number of components	1	1	1	1	-	1
Processing package description	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	SMA, 2 PIN	Plastic, SMA, 2 PIN	-	SMA, 2 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	TRANSFERRED
packaging shape	Rectangle	Rectangle	RECTANGULAR	Rectangle	-	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	-	Yes
Terminal form	C BEND	C BEND	C BEND	C BEND	-	C BEND
Terminal location	pair	pair	DUAL	pair	-	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	-	Plastic/Epoxy
structure	single	single	SINGLE	single	-	single
Diode component materials	silicon	silicon	SILICON	silicon	-	silicon
Diode type	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	-	Signal diode
Maximum reverse recovery time	0.0200 us	0.0350 us	0.0150 us	0.0200 us	-	0.0600 us
Maximum repetitive peak reverse voltage	50 V	100 V	150 V	200 V	-	600 V
Maximum average forward current	1 A	1 A	1 A	1 A	-	1 A
terminal coating	-	PURE Tin	MATTE TIN	PURE Tin	-	NOT SPECIFIED

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