BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-247AD
Dim.
A
B
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
G
T2
T1
T2
C
D
E
F
G
H
G
T1
J
K
L
M
N
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for
fusing
Critical rate of rise of on-state current
_
I
G
= 2 x
I
GT
, tr < 100 ns
TO-247AD
F = 60 Hz
F = 50 Hz
Tc = 80 °C
t = 16.7 ms
t = 20 ms
Value
41
420
400
880
Tj = 125°C
50
Unit
A
A
A
²
s
A/µs
tp = 10 ms
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature
range
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
V
DRM
/V
RRM
+ 100
V
A
W
°C
8
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I- III-IV
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 33
Ω
R
L
= 3.3 k
Ω
Tj = 125°C
Test Conditions
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
Value
50
100
1.3
0.2
80
70
160
500
10
V/µs
A/ms
Unit
mA
V
V
mA
mA
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 60 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
10
5
5
Unit
V
V
m
Ω
µ
A
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient
Parameter
Value
0.6
50
Unit
°C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
200 V ~~ 1000 V
BTB/BTA41
X
X
50 mA
Standard
TO-247AD
Sensitivity
Type
Package
OTHER INFORMATION
Part Number
BTB/BTA41
Marking
BTB/BTA41
Weight
4.5 g
Base
quantity
120
Packing
mode
Bulk
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
50
40
30
20
10
IT (R MS ) (A )
0
0
5
10
15
20
25
30
35
40
α
F ig. 2: R MS on-state current vers us cas e
temperature (full cycle).
45
40
35
30
25
20
15
10
5
0
IT (R MS ) (A )
B TA 41
B T B 41
P (W)
α
= 180°
180°
α
T c (° C )
0
25
50
75
100
125
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
1.E +00
K =[Zth/R th]
Zth(j-c)
F ig. 4:
values ).
IT M (A )
On-s tate
cha racteris tics
(maximum
400
100
T j max
1.E -01
Zth(j-a)
B TA/B T B 41
1.E -02
10
T j=25°C
1.E -03
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
tp (s )
V T M (V )
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T j max.:
V to = 0.85 V
R d = 10 mΩ
4.0
4.5
5.0
F ig. 5: S urge peak on-s tate current vers us
number of cycles .
F ig. 6: Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10 ms, and corresponding value of I²t.
IT S M (A ), I² t (A ² s )
IT S M
450
400
350
300
250
200
150
100
50
0
IT S M (A )
10000
t=20ms
Non repetitive
T j initial=25°C
One cycle
1000
dI/dt limitation:
50A /µ
s
I²t
R epetitive
T c=70°C
Number of cycles
1
10
100
1000
tp (ms )
100
0.01
0.10
1.00
T j initial=25°C
10.00
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 7: R elative varia tion of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
2.0
1.8
IG T
F ig. 8: R ela tive variation of critica l rate of decreas e
of main current vers us (dV /dt)c (typica l values ).
2.5
2.0
1.5
1.0
0.5
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
1.6
1.4
1.2
1.0
0.8
0.6
(dV /dt)c (V /µ )
s
1.0
10.0
100.0
IH & IL
T j(° C )
0.0
-40
-20
0
20
40
60
80
100
120
140
0.4
0.1
F ig. 9: R elative varia tion of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
0
0
25
50
T j (° C )
75
100
125
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