JMnic
Product Specification
Silicon PNP Power Transistors
2SA1108
DESCRIPTION
・With
MT-200 package
・High
power dissipation
APPLICATIONS
・For
power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-130
-130
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1108
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ; I
B
=0
-130
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-2.0
V
V
BE
Base-emitter on voltage
I
C
=-5A ; V
CE
=-5V
-2.0
V
μA
I
CBO
Collector cut-off current
V
CB
=-130V; I
E
=0
-5
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
μA
h
FE-1
DC current gain
I
C
=-2A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-5V
35
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V
60
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1108
Fig.2 outline dimensions
3
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