Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1047
DESCRIPTION
・Complement
to type 2SB817
・With
TO-3PN package
APPLICATIONS
・Power
amplification
・Low
frequency and audio band
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
140
6
12
15
100
150
-40~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=5mA ;I
E
=0
I
E
=5mA ;I
C
=0
I
C
=5A ;I
B
=0.5A
I
C
=1A;V
CE
=5V
V
CB
=80V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
f=1MHz;V
CB
=10V
60
20
15
210
MIN
140
160
6
2SD1047
TYP.
MAX
UNIT
V
V
V
2.5
1.5
0.1
0.1
200
V
V
mA
mA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.0A; I
B1
=-I
B2
=0.1A
V
CC
=20V ,R
L
=20Ω
0.26
6.88
0.68
μs
μs
μs
h
FE-1
Classifications
D
60-120
E
100-200
2
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