IS46TR85120AL-125KBLA1 datasheet, PDF

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IS46TR85120AL-125KBLA1: DescriptionDDR DRAM, 512MX8, 0.1ns, CMOS, PBGA78, 9 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78; Categorystorage storage; File Size3MB，81 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS46TR85120AL-125KBLA1 Overview

DDR DRAM, 512MX8, 0.1ns, CMOS, PBGA78, 9 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78

IS46TR85120AL-125KBLA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	TFBGA, BGA78,9X13,32
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.1 ns
Other features	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	800 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B78
length	10.5 mm
memory density	4294967296 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	78
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA78,9X13,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	1.35 V
Certification status	Not Qualified
refresh cycle	8192
Filter level	AEC-Q100
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.016 A
Maximum slew rate	0.243 mA
Maximum supply voltage (Vsup)	1.45 V
Minimum supply voltage (Vsup)	1.283 V
Nominal supply voltage (Vsup)	1.35 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	9 mm

IS46TR85120AL-125KBLA1 Related Products

	IS46TR85120AL-125KBLA1	IS46TR85120A-125KBLA1	IS46TR85120A-125KBLA2
Description	DDR DRAM, 512MX8, 0.1ns, CMOS, PBGA78, 9 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78	DDR DRAM, 512MX8, 0.1ns, CMOS, PBGA78, 9 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78	DDR DRAM, 512MX8, 0.1ns, CMOS, PBGA78, 9 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-78
Is it Rohs certified?	conform to	conform to	conform to
package instruction	TFBGA, BGA78,9X13,32	TFBGA, BGA78,9X13,32	TFBGA, BGA78,9X13,32
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	0.1 ns	0.1 ns	0.1 ns
Other features	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	800 MHz	800 MHz	800 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8
JESD-30 code	R-PBGA-B78	R-PBGA-B78	R-PBGA-B78
length	10.5 mm	10.5 mm	10.5 mm
memory density	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM
memory width	8	8	8
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	78	78	78
word count	536870912 words	536870912 words	536870912 words
character code	512000000	512000000	512000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	105 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	512MX8	512MX8	512MX8
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA78,9X13,32	BGA78,9X13,32	BGA78,9X13,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	1.35 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192
Filter level	AEC-Q100	AEC-Q100	AEC-Q100
Maximum seat height	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES
Continuous burst length	4,8	4,8	4,8
Maximum standby current	0.016 A	0.018 A	0.018 A
Maximum slew rate	0.243 mA	0.27 mA	0.27 mA
Maximum supply voltage (Vsup)	1.45 V	1.575 V	1.575 V
Minimum supply voltage (Vsup)	1.283 V	1.425 V	1.425 V
Nominal supply voltage (Vsup)	1.35 V	1.5 V	1.5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
width	9 mm	9 mm	9 mm

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