2N1376 datasheet, PDF - EEWORLD Datasheet

2N1376: Description300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5; Categorysemiconductor Discrete semiconductor; File Size265KB，3 Pages; ManufacturerETC1

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2N1376 Overview

300 mA, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO-5

Parameter Name	Attribute value
Maximum collector current	0.3000 A
Number of terminals	3
each_compli	Yes
state	Active
structure	SINGLE
Minimum DC amplification factor	20
jedec_95_code	TO-5
jesd_30_code	O-MBCY-W3
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	100 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	CYLINDRICAL
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	NPN
wer_dissipation_max__abs_	0.1500 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	GERMANIUM
Rated crossover frequency	15 MHz

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