VLZ-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• High reliability
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 56
10; 5
Pulse current
Single
TYPICAL APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
VLZ-series
VLZ-series
ORDERING CODE
VLZ-series-GS18
VLZ-series-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
2500 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
12 500
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Junction to ambient air
Junction temperature
Storage temperature range
Zener current
Forward voltage (max.)
I
F
= 200 mA
TEST CONDITION
R
thJA
300 K/W
On PC board 50 mm x 50 mm x 1.6 mm
SYMBOL
P
tot
R
thJA
T
j
T
stg
I
Z
V
F
VALUE
500
500
175
- 65 to + 175
P
tot
/V
Z
1.5
UNIT
mW
K/W
°C
°C
mA
V
Rev. 1.3, 30-Jan-12
Document Number: 81759
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLZ-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
V
MAX.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
4
4
4
4
4
4
6.5
6.73
6.93
7.15
7.39
7.63
7.88
8.14
8.39
8.66
8.94
9.22
9.44
9.67
9.98
100
100
100
100
80
80
70
70
60
60
50
50
40
40
40
25
25
25
20
20
20
13
13
13
10
10
10
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
10
10
MAX.
2000
2000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
900
900
900
800
800
800
500
500
500
300
300
300
150
150
150
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
Z
ZK
at I
ZT2
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
VLZ2V4A
VLZ2V4B
VLZ2V7A
VLZ2V7B
VLZ3V0A
VLZ3V0B
VLZ3V3A
VLZ3V3B
VLZ3V6A
VLZ3V6B
VLZ3V9A
VLZ3V9B
VLZ4V3A
VLZ4V3B
VLZ4V3C
VLZ4V7A
VLZ4V7B
VLZ4V7C
VLZ5V1A
VLZ5V1B
VLZ5V1C
VLZ5V6A
VLZ5V6B
VLZ5V6C
VLZ6V2A
VLZ6V2B
VLZ6V2C
VLZ6V8A
VLZ6V8B
VLZ6V8C
VLZ7V5A
VLZ7V5B
VLZ7V5C
VLZ8V2A
VLZ8V2B
VLZ8V2C
VLZ9V1A
VLZ9V1B
VLZ9V1C
VLZ10A
VLZ10B
VLZ10C
VLZ10D
VLZ11A
VLZ11B
Rev. 1.3, 30-Jan-12
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.455
3.6
3.74
3.89
4.04
4.17
4.3
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.7
9.94
10.18
10.5
NOM.
2.4
2.4
2.7
2.7
3.0
3.0
3.3
3.3
3.6
3.6
3.9
3.9
4.3
4.3
4.3
4.7
4.7
4.7
5.1
5.1
5.1
5.6
5.6
5.6
6.2
6.2
6.2
6.8
6.8
6.8
7.5
7.5
7.5
8.2
8.2
8.2
9.1
9.1
9.1
10
10
10
10
11
11
MAX.
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.8
4.93
5.07
5.2
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.3
9.59
9.9
10.2
10.44
10.71
11.05
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST CURRENT
I
ZT1
mA
I
ZT2
μA
MAX.
70
70
50
50
50
10
10
10
5
5
3
3
3
3
3
10
6
3
2
2
2
1
1
1
3
3
3
2
2
2
3
3
3
7.5
7.5
7.5
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
REVERSE LEAKAGE
CURRENT
I
R
at V
R
Document Number: 81759
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLZ-Series
www.vishay.com
Vishay Semiconductors
TEST CURRENT
I
ZT1
mA
MAX.
11.38
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.7
18.33
18.96
19.59
20.22
20.72
21.2
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.5
33.11
33.79
34.49
35.13
35.77
36.47
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
ZT2
μA
MAX.
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
10.28
10.6
10.9
11.2
11.5
11.9
12.3
12.8
13.2
13.6
14.1
14.5
14.9
15.4
16
16.5
17.1
17.7
18.3
18.7
19.1
19.6
20
20.4
20.9
21.5
22
22.4
23
23.7
24.3
25
25.6
26.3
26.9
27.6
28.2
28.8
29.4
29.9
30.5
31.2
31.7
32.3
32.9
REVERSE LEAKAGE
CURRENT
I
R
at V
R
V
MAX.
10
12
12
12
14
14
14
16
16
16
18
18
18
23
23
23
28
28
28
28
30
30
30
30
35
35
35
35
45
45
45
45
55
55
55
55
65
65
65
65
75
75
75
75
85
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
MAX.
120
110
110
110
110
110
110
110
110
110
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
Z
ZK
at I
ZT2
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
VLZ11C
VLZ12A
VLZ12B
VLZ12C
VLZ13A
VLZ13B
VLZ13C
VLZ15A
VLZ15B
VLZ15C
VLZ16A
VLZ16B
VLZ16C
VLZ18A
VLZ18B
VLZ18C
VLZ20A
VLZ20B
VLZ20C
VLZ20D
VLZ22A
VLZ22B
VLZ22C
VLZ22D
VLZ24A
VLZ24B
VLZ24C
VLZ24D
VLZ27A
VLZ27B
VLZ27C
VLZ27D
VLZ30A
VLZ30B
VLZ30C
VLZ30D
VLZ33A
VLZ33B
VLZ33C
VLZ33D
VLZ36A
VLZ36B
VLZ36C
VLZ36D
VLZ39A
10.82
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.8
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.7
28.36
29.02
29.68
30.32
30.9
31.49
32.14
32.79
33.4
34.01
34.68
NOM.
11
12
12
12
13
13
13
15
15
15
16
16
16
18
18
18
20
20
20
20
22
22
22
22
24
24
24
24
27
27
27
27
30
30
30
30
33
33
33
33
36
36
36
36
39
Rev. 1.3, 30-Jan-12
Document Number: 81759
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLZ-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
V
MAX.
33.6
34.2
34.8
35.5
36.2
37
38
41.8
45.6
50.4
85
85
85
85
85
85
90
90
100
100
MAX.
250
250
250
250
250
250
-
-
-
-
Z
ZK
at I
ZT2
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
VLZ39B
VLZ39C
VLZ39D
VLZ39E
VLZ39F
VLZ39G
VLZ43
VLZ47
VLZ51
VLZ56
35.36
36
36.63
37.36
38.14
38.94
40
44
48
53
NOM.
39
39
39
39
39
39
43
47
51
56
MAX.
37.19
37.85
38.52
39.29
40.11
40.8
45
49
54
60
5
5
5
5
5
5
5
5
5
5
0.5
0.5
0.5
0.5
0.5
0.5
-
-
-
-
TEST CURRENT
I
ZT1
mA
I
ZT2
μA
MAX.
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
REVERSE LEAKAGE
CURRENT
I
R
at V
R
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
600
500
400
300
200
100
0
0
95 9602
P
tot
- Total Power Dissipation (mW)
1.3
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
1.1
1.0
0.9
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0.8
80
120
160 200
40
T
amb
- Ambient Temperature (°C)
- 60
95 9599
0
60
120
180
240
T
j
- Junction Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
1000
15
T
j
= 25 °C
100
TK
VZ
- Temperature Coefficient
of V
Z
(10
-4
/K)
V
Z
- Voltage Change (mV)
10
5
I
Z
= 5 mA
0
I
Z
= 5 mA
10
1
0
95 9598
-5
5
10
15
20
25
95 9600
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Rev. 1.3, 30-Jan-12
Fig. 4 - Temperature Coefficient of V
Z
vs. Z-Voltage
Document Number: 81759
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLZ-Series
www.vishay.com
Vishay Semiconductors
50
P
tot
= 500 mW
T
amb
= 25 °C
200
C
D
- Diode Capacitance (pF)
V
R
= 2 V
T
j
= 25 °C
100
I
Z
- Z-Current (mA)
25
150
40
30
20
50
10
0
0
5
10
15
20
0
15
95 9607
20
25
30
35
95 9601
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 8 - Z-Current vs. Z-Voltage
Fig. 5 - Diode Capacitance vs. Z-Voltage
100
1000
10
r
Z
- Differential Z-Resistance (Ω)
I
F
- Forward Current (mA)
I
Z
= 1 mA
100
1
T
j
= 25 °C
5 mA
10 10 mA
0.1
0.01
0.001
0
95 9605
0.2
0.4
0.6
0.8
1.0
1
0
95 9606
T
j
= 25 °C
5
10
15
20
25
V
F
- Forward Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
100
80
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
40
20
0
0
95 9604
4
6
8
12
20
V
Z
- Z-Voltage (V)
Fig. 7 - Z-Current vs. Z-Voltage
Rev. 1.3, 30-Jan-12
Document Number: 81759
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Test/Measurement
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